Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Vladislav Mityashkin"'
Autor:
Vladislav Mityashkin, Denis Mikhailov, Natalia Kaurova, A. I. Kardakova, B. M. Voronov, I. S. Vasil’evskii, Pavel Mikhalev, Gregory Goltsman, Ivan Belikov, Alexander Shurakov, Ivan Tretyakov
Publikováno v:
Microelectronic Engineering. 195:26-31
In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfbeaa9c2fa27ecd1468491b53f7c463
https://doi.org/10.1016/j.mee.2018.03.008
https://doi.org/10.1016/j.mee.2018.03.008
Autor:
Victor Belitsky, Vladislav Mityashkin, Vincent Desmaris, S.V. Antipov, Gregory Goltsman, M. Rudziński, Sascha Krause, Denis Meledin
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. :1-7
In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95cd227e38c98d905d18fc9b251c7d24
https://doi.org/10.1109/tthz.2016.2630845
https://doi.org/10.1109/tthz.2016.2630845