Výsledky vyhledávání - "Vladimir Volynets"

Selective SiN/SiO2 etching by SF6/H2/Ar/He plasma

Autor: A. A. Kobelev, P. A. Pankratiev, A. S. Smirnov, Vladimir Volynets, A. Vinogradov, Yu. Barsukov

Publikováno v: AIP Conference Proceedings.

This paper presents the experimental data about SiN and SiO2 etching by SF6/H2/Ar/He plasma discharge. It has been shown that SiN etch rate increases if add small amount of He (less than 5 sccm) into the discharge. The SiO2 etch rate does not depend

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3048ebd0c45e3291423c3bc32d131007
https://doi.org/10.1063/1.5135490

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Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism

Autor: Mark J. Kushner, Sang Ki Nam, Yuri Barsukov, Ji-Eun Jung, Shuo Huang, Vladimir Volynets, Kyu-hee Han, Gon-Jun Kim

Publikováno v: Journal of Vacuum Science & Technology A. 38:023008

Developing processes for highly selective etching of silicon nitride (Si3N4) with respect to silicon dioxide (SiO2) is a major priority for semiconductor fabrication processing. In this paper and in Paper I [Volynets et al., J. Vac. Sci. Technol. A 3

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99e693cc9069a53027b11adf6e128df6
https://doi.org/10.1116/1.5125569

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Optimizing remote plasma sources for selective etching

Autor: Sangheon Lee, Jonathan Tennyson, In-Cheol Song, Siqing Lu, Vladimir Volynets, Shuo Huang, James R. Hamilton, Mark J. Kushner

Publikováno v: 2016 IEEE International Conference on Plasma Science (ICOPS).

Remote plasma sources (RPS) are used in microelectronics fabrication to produce fluxes of radicals for etching and surface passivation in the absence of damage that may occur by charging and energetic ion bombardment. RPS reactors typically use flow

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::59409c18f94dc4d9f16bd6cd08b7f629
https://doi.org/10.1109/plasma.2016.7534327

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Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation

Autor: A. S. Smirnov, Yuri Barsukov, Vladimir Volynets, Nikolai A. Andrianov, Alexander V. Tulub, A. A. Kobelev

Publikováno v: Journal of Vacuum Science & Technology A. 36:061301

Dry etching of silicon nitride (SiN) is a challenging process in the semiconductor industry and requires high etch selectivity. Fluorine containing chemistry is widely used to etch silicon based materials, and one of the methods to increase the etch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f7665e340f767a376247efdd6470175
https://doi.org/10.1116/1.5044647

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Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures

Autor: James R. Hamilton, Shuo Huang, In Cheol Song, Sang Ki Nam, Siqing Lu, Jonathan Tennyson, Mark J. Kushner, Vladimir Volynets

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:021305

Remote plasma sources (RPSs) are being investigated to produce fluxes of radicals for low damage material processing. In this computational investigation, the properties of a RPS etching system are discussed where an Ar/NF3/O2 gas mixture is flowed t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f83e47316aebe389cafb42d0d99da07
https://doi.org/10.1116/1.5019673

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Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor

Autor: Vladimir Volynets, Youngmin Park, Andrey Ushakov, Sangmin Jeong, Gon-Ho Kim, Dougyong Sung

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:13-19

The influence of the phase shift between rf voltages applied to the powered electrodes on plasma parameters and etch characteristics was studied in a very high-frequency (VHF) capacitively coupled plasma (CCP) triode reactor. rf voltages at 100MHz we

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::978f17ded65f334e48dd197903119443
https://doi.org/10.1116/1.3010717

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Study of fluorocarbon plasma in 60 and 100MHz capacitively coupled discharges using mass spectrometry

Autor: Vladimir Volynets, Sangmin Jeong, Yongho Ihm, Andrey Ushakov, Han Moon-Hyeong, Jehun Woo, Dougyong Sung

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1198-1207

The signals of positive ions and radicals formed in the fluorocarbon plasma of the capacitively coupled plasma reactor were measured using a quadrupole mass spectrometry and optical emission actinometry. The plasma was produced at 60 and 100MHz frequ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54c1b7387a6cf2216ca09664eb53d378
https://doi.org/10.1116/1.2965812

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Experimental study of spatial nonuniformities in 100MHz capacitively coupled plasma using optical probe

Autor: V. G. Pashkovsky, Vladimir Volynets, K. S. Jeong, T. Y. Kwon, J. B. Lee, Andrey Ushakov, Yu.N. Tolmachev, Dougyong Sung

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:406-415

Plasma spatial nonuniformities in the 100MHz rf driven capacitively coupled reactor used for reactive ion etching of 300mm substrates were experimentally studied using a linear scanning optical emission spectroscopy probe. Radial profiles of plasma e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::606ab43d1fcb8b5ca001cac32d14b04a
https://doi.org/10.1116/1.2899413

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Production of energetic ions in plasma by ambipolar fields: Application to etching

Autor: Yu.N. Tolmachev, Wontaek Park, Vladimir Volynets, V. G. Pashkovskiy

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:726-730

A plasma accelerator based on inductively coupled plasma source, which is able to produce an axially directed flux of accelerated ions onto the wafer without applying the bias voltage, has been studied and utilized in a semiconductor etch process. Io

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b8734dd7e05b22983a5e61541a23788
https://doi.org/10.1116/1.2743647

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Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation

Autor: Gon-Jun Kim, Sang Ki Nam, Yuri Barsukov, Kyu-hee Han, Vladimir Volynets, Byoungsu Lee, Sangjun Lee

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:061310

This paper describes the study of mechanisms of highly selective silicon nitride etching, in particular, the role of NO in silicon nitride etching by atomic fluorine. This paper presents experimental and simulation data about SiN, SiO2, and Si etchin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7267c4200b1b6038c65b42560b509c79
https://doi.org/10.1116/1.5004546

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