Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Vladimir V. Voronkov"'
Autor:
Vladimir V. Voronkov
Publikováno v:
Advances in Materials Science and Engineering, Vol 2018 (2018)
In boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (whe
Externí odkaz:
https://doaj.org/article/48b0ea04be434a639152ec0cb8244a98
Autor:
Vladimir V. Voronkov
Publikováno v:
physica status solidi (a). 219:2200081
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1030424daf4ebd46dd35331278d093
https://doi.org/10.1002/pssa.202200081
https://doi.org/10.1002/pssa.202200081
Publikováno v:
Journal of Applied Physics. 131:165702
Silicon samples after fast-firing with a hydrogen-rich silicon nitride layer on their surfaces can contain high concentrations of hydrogen (up to 6 × 1015 cm−3 in this study). Directly after fast-firing, this hydrogen is mostly present in a neutra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c532bc5f53e1372e362b4c15546c731e
https://doi.org/10.1063/5.0086307
https://doi.org/10.1063/5.0086307
Publikováno v:
Solar Energy Materials and Solar Cells. 232:111340
We examine the impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in boron-doped p-type Czochralski-grown silicon wafers. We introduce the hydrogen into the silicon bulk by rapid thermal annealing. The hydro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::838d346470a835f196e722edaa24e521
https://doi.org/10.1016/j.solmat.2021.111340
https://doi.org/10.1016/j.solmat.2021.111340
Autor:
Vladimir V. Voronkov, Maksym Myronov, John D. Murphy, Alex I. Pointon, Vishal Shah, Robert J. Falster, Nicholas E. Grant
For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advantageous as boron plays an important role in the light‐induced degradation mechanism. With the continuous Czochralski crystal growth process it is no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ee3a8281829c29ddd8a446d84ee565f
http://wrap.warwick.ac.uk/118185/1/WRAP-minority-carrier-lifetime-indium-silicon-photovoltaics-Murphy-2019.pdf
http://wrap.warwick.ac.uk/118185/1/WRAP-minority-carrier-lifetime-indium-silicon-photovoltaics-Murphy-2019.pdf
Publikováno v:
Physica Status Solidi (B) Basic Research 257 (2019), Nr. 1
A conflict between previous and recently published data on the two-stage light-induced degradation (LID) of carrier lifetime in boron-doped oxygen-containing crystalline silicon is addressed. The previous experiments showed the activation of two boro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7aecdb068feec7255852546afb93d0b
https://www.repo.uni-hannover.de/handle/123456789/9328
https://www.repo.uni-hannover.de/handle/123456789/9328
Publikováno v:
physica status solidi c. 13:712-717
Light-induced degradation of minority carrier lifetime in silicon is caused by the formation of two B-O recombination centres: fast-stage centres (FRC) and slow-stage centres (SRC). FRC were concluded to emerge by a carrier-assisted reconfiguration o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e447577684e47b62266380e0ee54244
https://doi.org/10.1002/pssc.201600016
https://doi.org/10.1002/pssc.201600016
Publikováno v:
physica status solidi (b). 253:1721-1728
The major B–O recombination centres in p-type silicon (labelled SRC) are known to be permanently deactivated at elevated temperature in the presence of excess electrons. This process is accelerated by hydrogen but it occurs also in low-hydrogen mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e92c118c850abe2b4ce01491d28e21
https://doi.org/10.1002/pssb.201600082
https://doi.org/10.1002/pssb.201600082
Autor:
Stepan A. Marchenko, Nikolaj V. Muhanov, Vladimir V. Voronkov, Alexej N Shevyakov, Evgeny Tihonov
Publikováno v:
Resources and Technology. 4:93-105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06726904c2266cff3178ecc3fb181385
https://doi.org/10.15393/j2.art.2016.3641
https://doi.org/10.15393/j2.art.2016.3641
Publikováno v:
Journal of Crystal Growth. 460:13-15
The evaporation from the silicon melt, during Czochralski process, is an important effect for Phosphorus and Antimony dopants. The evaporation rate γ was deduced from the measured axial profile of the resistivity converted into the concentration. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6161f53d3f40b54a33a5e9363cc11cd7
https://doi.org/10.1016/j.jcrysgro.2016.12.028
https://doi.org/10.1016/j.jcrysgro.2016.12.028