Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Vladimir V. Vasil'ev"'
Autor:
T. F. Burukhina, Vladimir D. Scopintsev, E. G. Vinokurov, Vladimir V. Vasil’ev, Gulnaz M. Mukhametova
Publikováno v:
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA KHIMICHESKAYA TEKHNOLOGIYA. 64:88-97
In this paper the effect of parameters such as concentration of glycine, succinic acid and bath pH on the technological parameters of the electroless deposition of nickel-phosphorus alloy coatings (deposition rate, specific pH change during depositio
Autor:
Nikolai H. Talipov, Alexandr O. Suslyakov, Vasiliy S. Varavin, Vladimir P. Reva, Sergei V. Korinets, Fiodor F. Sizov, Tamara I. Zakhar'yash, Vladimir V. Vasil’ev, A. G. Golenkov, Victor N. Ovsyuk, Vyacheslav V. Zabudsky, Yuriy P. Derkach, Nikolai N. Mikhailov
Publikováno v:
Semiconductor Photodetectors II.
4×288 MCT LWIR linear arrays with 28X25 μm diodes and silicon ROICs were designed, manufactured and tested. MCT layers were grown by MBE technology on (013) GaAs substrates with CdTe/ZnTe buffer layers and λ co = 11.2±0.15 μm at T = 78 K. CCD an
Autor:
Fiodor F. Sizov, Yuri G. Sidorov, Vladimir V. Vasil’ev, Yurii P. Derkach, Vladimir P. Reva, Victor N. Ovsyuk, Joanna V. Gumenjuk-Sichevskaya, A. G. Golenkov, Dmitrii G. Esaev
Publikováno v:
Photodetectors: Materials and Devices VI.
Mercury-Cadmium-Telluride (MCT) 2 X 64 linear arrays with silicon readouts were designed, manufactured and tested. NCT layers were grown by MBE method on (103) GaAs substrates with CdZnTe buffer layers. 50 X 50 mm n-p-type photodiodes were formed by