Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Vladimir V. Tretyakov"'
Publikováno v:
Microchimica Acta. 132:365-375
An analytical model of an effective atomic number, Zeff, for simultaneous calculation of composi- tion and thickness of films on substrates that allows for backscattering processes is presented. Comparison of dependencies of'(z) parameters for film e
Publikováno v:
Microchimica Acta. 132:361-364
Procedures for the preparation of bevels and the determination of their geometrical parameters have been developed. Using these procedures study of compositional and optical spatially resolved inhomogeneities of AlxGa1−xN layers grown on (0001) sap
Publikováno v:
Semiconductor Science and Technology. 14:589-594
Intrinsic strain along the c-axis of the lattice, zz = c/c, rms fluctuation zz of this strain (microstrain), rms axis-tilt fluctuations zx and xz for the a- and c-axes, block size in the directions parallel and normal to the sample surface and other
Autor:
I. A. Khrebtov, A. V. Bobyl, I. I. Shaganov, V. G. Malyarov, M. V. Baidakova, Vladimir V. Tretyakov
Publikováno v:
Technical Physics Letters. 23:520-522
Multi-technique structural and electrophysical investigations of VO2 films on SiO2/Si substrates are carried out to study the microscopic nature of fluctuator defects — sources of lowfrequency flicker noise. It is established that the noise intensi
Publikováno v:
Modern Developments and Applications in Microbeam Analysis ISBN: 9783211831069
Electron probe microanalysis (EPMA) was used to study the composition of nanostructured materials based on insulating porous ‘hosts’ (namely synthetic SiO2 opal) infilled with different ‘guest’ materials. In the bare opal a reduction of the k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a6479f9f49b4d22da0f0c3db475d7bc
https://doi.org/10.1007/978-3-7091-7506-4_30
https://doi.org/10.1007/978-3-7091-7506-4_30
Publikováno v:
Modern Developments and Applications in Microbeam Analysis ISBN: 9783211831069
Arsenic excess in low temperature grown GaAs (LT GaAs) was determined by EPMA. This excess varied from 0.4 to 1.5 at.% for LT GaAs films grown under various conditions. The EPMA data were compared with independent results from x-ray diffraction and o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da936407d5a276b8cfa129552b58252
https://doi.org/10.1007/978-3-7091-7506-4_26
https://doi.org/10.1007/978-3-7091-7506-4_26