Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Vladimir V. Tetyorkin"'
Autor:
Volodymyr I. Lukyanenko, Sergiy V. Stariy, Vladimir V. Tetyorkin, Grygoriy S. Oliynuk, Andriy T. Voroschenko, Andriy V. Sukach
Publikováno v:
Infrared Detector Materials and Devices.
InAs photodiodes were prepared by short-te rm cadmium diffusion into substrates with n-type conductivity. This preparation technique results in formation of p + -p-n-n + diodes with compensated region embedded between two doped regions. Experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6488b1d69b11d484d61b061adcbae204
https://doi.org/10.1117/12.561401
https://doi.org/10.1117/12.561401
Autor:
A. V. Sukach, Vladimir V. Tetyorkin, S. A. Sypko, A. T. Voroschenko, Z. F. Ivasiv, A. V. Lubchenko
Publikováno v:
SPIE Proceedings.
In review articles the methods of preparation as well as basic properties of ohmic contacts metal-semiconductors A 3 B 5 are generalized. Chemical treatment of n-InAs result in pinning of a Fermi level by surface states in a conduction band. Thus, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::550a036cf4f08f2c2ebaa2d0d68dd40b
https://doi.org/10.1117/12.417770
https://doi.org/10.1117/12.417770
Autor:
Z. F. Ivasiv, Vladimir V. Tetyorkin
Publikováno v:
SPIE Proceedings.
The photocurrent spectra are investigated in Hg1-xCdxTe liquid phase epitaxy (LPE) films and photodiodes of n + -p type on their base with composition gradient. The LPE films were grown on CdTe and CdZnTe single crystal substrates. The transformation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::249dd84ac657083141b87a50c1902c7f
https://doi.org/10.1117/12.417769
https://doi.org/10.1117/12.417769
Publikováno v:
SPIE Proceedings.
The IR transmission spectra of HgCdTe epitaxial films grown on CdTe substrates were measured. The films investigated contain an exponential composition gradient. Optical density D vs the photon energy (omega) are analyzed both theoretically and exper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0dec21a05ece55ce740181fcf10e36e
https://doi.org/10.1117/12.368334
https://doi.org/10.1117/12.368334
Publikováno v:
SPIE Proceedings.
Carrier transport mechanisms in photodiodes from narrow-gap HgCdTe and PbSnTe semiconductors for long wavelength infra- red and medium wavelength infra-red applications are discussed in connection with their use in hybrid multielement arrays for T ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a48fbf98788aebc0bde21d7a7d0dbf8
https://doi.org/10.1117/12.344748
https://doi.org/10.1117/12.344748
Autor:
Vladimir V. Tetyorkin, Yurii P. Derkach, Fiodor F. Sizov, Vladimir P. Reva, Yu. G. Kononenko, Sergey D. Darchuk
Publikováno v:
SPIE Proceedings.
P-channel silicon direct injection read-out devices with p- type buried channel CD multiplexers which consist of input circuits, shift register and output circuits were designed, fabricated and tested. Read-out devices were designed for using with IR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4fb6cbb822c481a0967a432ce479419
https://doi.org/10.1117/12.280411
https://doi.org/10.1117/12.280411
Autor:
Sergey D. Darchuk, V. A. Petryakov, Fiodor F. Sizov, Yu. G. Kononenko, Vladimir V. Tetyorkin, Vladimir P. Reva, Yurii P. Derkach
Publikováno v:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics.
Hg 1-x Cd x Te (x approximately equal to 0.205, 0.27) 64 photodiode hybrid linear arrays for spectral regions (lambda) approximately equal to 3 - 5 and 8 - 12 micrometer have been designed. The p + -n-diodes were As-diffused n-type indium doped singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834cac125cacd5631c3b124afb64bdac
https://doi.org/10.1117/12.226144
https://doi.org/10.1117/12.226144
Publikováno v:
SPIE Proceedings.
Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fccd73e0ae0b0d4e235e011ddf3f71a
https://doi.org/10.1117/12.224983
https://doi.org/10.1117/12.224983
Autor:
Fiodor F. Sizov, V. V. Golovin, Joanna V. Gumenjuk-Sichevskaya, Vyacheslav V. Zabudsky, Vladimir V. Tetyorkin
Publikováno v:
SPIE Proceedings.
Strong magnetic field Hall coefficient and magnetoresistivity dependencies in PbTe/PbS semimetallic SLs with periods of 12.0 divided by 100.0 nm were observed. From the analysis of these dependencies by Monte-Carlo fitting procedure the band-offset (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19734d199a8fca5d56942fd7dbbe038b
https://doi.org/10.1117/12.224951
https://doi.org/10.1117/12.224951
Autor:
N. O. Tashtanbajev, V. B. Orletskii, Fiodor F. Sizov, Vladimir V. Tetyorkin, Alexandr G. Stepanushkin
Publikováno v:
Optical Engineering. 33:1450
Temperature dependencies of dark electrical characteristics (Hall effect and conductivity) are investigated in PbSe polycrystalline films with different crystallite sizes deposited on glass and Si substrates. In these films the spectral dependencies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c287b6b3f32202918d59c284c37c9c
https://doi.org/10.1117/12.167103
https://doi.org/10.1117/12.167103