Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Vladimir V. Shchennikov"'
Autor:
Yoshihisa Mori, Shigeyuki Nakamura, Sergey V. Ovsyannikov, Vladimir V. Shchennikov, Natalia V. Morozova, Alexander E. Karkin, V. I. Voronin, Kenichi Takarabe
Publikováno v:
The Journal of Physical Chemistry C. 120:9692-9701
In this work, we systematically investigated the electrical resistivity, Hall, and magnetoresistance effects of Al-doped Mg2Si thermoelectrics, irradiated with a fluence of fast neutrons and consequently isochronally annealed at moderate high tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da11da2b987e74feadabb615158ace0
https://doi.org/10.1021/acs.jpcc.6b02980
https://doi.org/10.1021/acs.jpcc.6b02980
Publikováno v:
Scientific Reports
Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of convent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b3ff286833a4bab5105ddd3df7e58bb
Autor:
Sergey V, Ovsyannikov, Natalia V, Morozova, Igor V, Korobeinikov, Vasyl, Haborets, Ruslan, Yevych, Yulian, Vysochanskii, Vladimir V, Shchennikov
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 46(13)
External stimuli enabling either a continuous tuning or an abrupt switching of the basic properties of materials that are utilized in various industrial appliances could significantly extend their range of use. The key characteristics of semiconducto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::63dafbe764c1e0657b32822b2475bc8c
https://pubmed.ncbi.nlm.nih.gov/28280830
https://pubmed.ncbi.nlm.nih.gov/28280830
Bulk Silicon Crystals with the High Boron Content, Si1–xBx: Two Semiconductors Form an Unusual Metal
Autor:
Vladimir Dmitriev, Vladimir V. Shchennikov, Sergey V. Ovsyannikov, Huiyang Gou, Alexander E. Karkin, Yoichi Nakajima, Richard Wirth, Leonid Dubrovinsky, Natalia Dubrovinskaia
Publikováno v:
Chemistry of Materials
Silicon is a key technological material, and its controlled doping is one of the simple and effective ways which are applied for creation of new advanced materials with tunable optoelectronic properties. Boron was known to be a dopant that can dramat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff8537a56da0c09b84873abde40fe114
https://doi.org/10.1021/cm502083v
https://doi.org/10.1021/cm502083v
Autor:
Sergey V. Ovsyannikov, Alexander E. Karkin, Vladimir V. Shchennikov, Iuliia A. Khmeleva, Natalia V. Morozova
Publikováno v:
physica status solidi (b). 250:741-745
In the present work the results of investigation of the thermoelectric (TE) properties of some Zn, Ti and Fe oxides and FeAs-based compounds under compression up to 20 GPa are reported. The data obtained of thermoelectric power S dependence on pressu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8ef6ddd1af7b153f549beaaf4863a8
https://doi.org/10.1002/pssb.201200668
https://doi.org/10.1002/pssb.201200668
Charge-ordering transition in iron oxide Fe_{4}O_{5}$ involving competing dimer and trimer formation
Autor:
Huiyang Gou, Sander van Smaalen, Sergey E. Kichanov, D. P. Kozlenko, Alexander A. Tsirlin, Leonid Dubrovinsky, Vladimir V. Shchennikov, Sergey V. Ovsyannikov, Maxim Bykov, Elena Bykova, Alexander E. Karkin, Artem M. Abakumov, Catherine McCammon, Ricardo Egoavil, Vadim Dyadkin, Dmitry Chernyshov, Johan Verbeeck
Publikováno v:
Nature chemistry
Phase transitions that occur in materials, driven, for instance, by changes in temperature or pressure, can dramatically change the materials’ properties. Discovering new types of transitions and understanding their mechanisms is important not only
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de2729f71db0b6fce11b6d659dc0d986
https://hdl.handle.net/10067/1335930151162165141
https://hdl.handle.net/10067/1335930151162165141
Publikováno v:
Journal of Physics and Chemistry of Solids. 71:1168-1174
The paper reports details of a high-pressure thermoelectric power (Seebeck effect) technique up to 40 GPa. Several different types of high-pressure cells with anvil insets are presented. The technique was applied for measurements of pressure dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66128cb76913a081fb38d7dfda4ded5f
https://doi.org/10.1016/j.jpcs.2010.03.028
https://doi.org/10.1016/j.jpcs.2010.03.028
Autor:
Sergey V. Ovsyannikov, Igor V. Korobeinikov, V. A. Kulbachinskii, Vladimir V. Shchennikov, O. A. Usov, Natalia V. Morozova, L. N. Lukyanova
Publikováno v:
Journal of Physics D: Applied Physics. 51:025501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d566b19f4ccfb65114c2b8c56801ac2c
https://doi.org/10.1088/1361-6463/aa9b5f
https://doi.org/10.1088/1361-6463/aa9b5f
Publikováno v:
High Pressure Research. 29:514-519
We report an original technique for the precise measurement of a plunger's displacement of a high-pressure cell under loading up to 30 GPa. We show that the method gives information about changes in mechanical properties of a microsample, such as vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36568e10172bfcd6afc0951c6becb69d
https://doi.org/10.1080/08957950903474643
https://doi.org/10.1080/08957950903474643
Publikováno v:
Chemistry of Materials
Chemistry of Materials, American Chemical Society, 2010, 22, pp.635-647. ⟨10.1021/cm902000x⟩
Chemistry of Materials, 2010, 22, pp.635-647. ⟨10.1021/cm902000x⟩
Chemistry of Materials, American Chemical Society, 2010, 22, pp.635-647. ⟨10.1021/cm902000x⟩
Chemistry of Materials, 2010, 22, pp.635-647. ⟨10.1021/cm902000x⟩
International audience; High pressure has a strong impact on materials. In regards to thermoelectrics, pressure is able to significantly improve their thermoelectric (TE) performance (i.e., power factor and figure of merit), and for this reason, pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6499594f1aeedf697a699fcb43334855
https://doi.org/10.1021/cm902000x
https://doi.org/10.1021/cm902000x