Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Vladimir V. Ovcharov"'
Autor:
Vladimir V. Ovcharov, Valeriya Prigara
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5914d7ce95776271d20208ee1d47de6d
https://doi.org/10.1117/12.2623814
https://doi.org/10.1117/12.2623814
Publikováno v:
Journal of Materials Science and Chemical Engineering. :54-65
The effect of a quartz plate (window) on the silicon wafer temperature is studied in the conditions of the combined thermal transfer in a lamp-based chamber for the rapid thermal treatment (RTP) set up. The chamber for RTP is simulated by a radiative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e65bd53fc14b6065b89d46ad38279b
https://doi.org/10.4236/msce.2020.81006
https://doi.org/10.4236/msce.2020.81006
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
A simulation is made of the propagation of a thermo-optical traveling wave along a silicon wafer surface containing an isolated optical inhomogeneity which critically changes a balance of input and output heat in the position of the localization of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f819987a627156ac971a3cce2d9f05f
https://doi.org/10.1117/12.2521465
https://doi.org/10.1117/12.2521465
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
Formulas were derived for the calculation of thermal radiation heat transfer in a radiative-closed thermal system containing two semitransparent gray wafers placed between two opaque wafers. The formulas have universal application and can be used in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb3f19f673c864b121937f0613219a7
https://doi.org/10.1117/12.2521891
https://doi.org/10.1117/12.2521891
Critical parameters of silicon wafer lamp-based annealing in high power flux of incoherent radiation
Publikováno v:
SPIE Proceedings.
In the heat system modeling lamp-based annealing in the thermal treatment reactor controlled by the heater temperature and the effective heat exchange coefficient the temperature of the lightly doped silicon wafer is investigated in reactors with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f59d60e8fe0467eebe23f4e9dd89c2ec
https://doi.org/10.1117/12.2267064
https://doi.org/10.1117/12.2267064
Publikováno v:
SPIE Proceedings.
The dynamic properties of a silicon wafer thermally heated up under a bistable regime in a lamp-based reactor are simulated with regard to an optical non-gomogeneity as a nucleus of a high-temperature phase. The optical non-gomogeneity is represented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f6b7a9e366d73ba70b2249e31cfb00
https://doi.org/10.1117/12.2266553
https://doi.org/10.1117/12.2266553
Publikováno v:
SPIE Proceedings.
In a silicon wafer, temperature oscillations observed in a thermal chamber of the rapid thermal annealing set up are investigated in the conditions corresponding to a bistable behavior of a wafer. Oscillations with a typical period near ~400 s are ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb8a86877e011ec57de7224bd87575d
https://doi.org/10.1117/12.2018016
https://doi.org/10.1117/12.2018016
Autor:
Valery I. Rudakov, Vladimir V. Ovcharov, Alexander A. Victorov, Boris V. Mochalov, Yuri I. Denisenko
Publikováno v:
SPIE Proceedings.
The process of rapid annealing of implanted silicon wafers under non-isothermal conditions has been studied. It was established, applied temperature gradient i�L gives rise to relative shift of non-isothermal concentration profiles, corresponding t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e27697fd7ff844cb05d39c726555d08c
https://doi.org/10.1117/12.802484
https://doi.org/10.1117/12.802484
Publikováno v:
SPIE Proceedings.
gradient VT and heat of transport Q* onconcentration profiles is carried out for diffusion from an instantaneous plane source and an extended source of infiniteextent. The estimations of heats of transport of the P and B in silicon are made at noniso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3556cf8d63328311c2f4acece26ab6b
https://doi.org/10.1117/12.681764
https://doi.org/10.1117/12.681764
Publikováno v:
SPIE Proceedings.
For description of the diffusion process in a temperature field at the constant temperature gradient in semi-infinite media from an extended source of infinite extent and an instantaneous plane source the simple formulae taking into account the tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f1914841b88acc0aa98777e9253d57
https://doi.org/10.1117/12.562660
https://doi.org/10.1117/12.562660