Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Vladimir V. Kolos"'
Autor:
Natalya S. Kovalchuk, Yuliya A. Marudo, Anna A. Omelchenko, Uladzimir A. Pilipenka, Vitali A. Saladukha, Sergey A. Demidovich, Vladimir V. Kolos, Victor M. Anishchik, Viktar A. Filipenia, Dmitry V. Shestovski
Publikováno v:
Journal of the Belarusian State University. Physics. :80-87
The charge properties of thin dielectrics, obtained by rapid thermal processing (RTP), and their interfaces with silicon for MOS transistors are investigated. The production of insulator layers was carried out by a two- or three-stage RTP with photon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea06ab94a93eea768098f40834f074d9
https://doi.org/10.33581/2520-2243-2022-1-80-87
https://doi.org/10.33581/2520-2243-2022-1-80-87
Autor:
V. V. Sidsky, Vitaliy A. Solodukha, Vladimir V. Kolos, Dumitru Luca, Alyaxandr N. Pyatlitski, A. V. Semchenko, V. E. Gaishun, Natalya S. Kovalchuk, Sergei Khakhomov
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9783319674582
The great problem for ferroelectric capacitors is the physico-chemical and mechanical interaction of ferroelectric films with surrounding materials, which leads to degrading of the characteristics of the ferroelectric element, increasing of current l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7652a29d41826023edaf3aa60c43a3f
https://doi.org/10.1007/978-3-319-67459-9_19
https://doi.org/10.1007/978-3-319-67459-9_19
