Zobrazeno 1 - 10
of 403
pro vyhledávání: '"Vladimir V. Fedorov"'
Autor:
Vyacheslav V. Nikishin, Pavel A. Blinov, Vladimir V. Fedorov, Evgeniya K. Nikishina, Igor V. Tokarev
Publikováno v:
Записки Горного института, Vol 264, Pp 937-948 (2023)
This article presents the results of drilling, experimental filtration work and laboratory studies aimed at assessing the resources and quality of groundwater in the licensed area of Vysotsky Island located in the Leningrad region, in the Gulf of Fin
Externí odkaz:
https://doaj.org/article/8cce2e08e13b4cb3a3a6a9bce1904a90
Autor:
Sergey M. Suturin, Vladimir V. Fedorov, Alexander M. Korovin, Gleb A. Valkovskiy, Masao Tabuchi, Nikolai S. Sokolov
Publikováno v:
Surfaces, Vol 4, Iss 2, Pp 97-105 (2021)
Adding uniaxial in-plane anisotropy to the otherwise four-fold Si(001) surface has for a long time been known to be possible via epitaxial deposition of a single atomic layer of calcium fluoride (CaF2), which forms an array of micron-long (110) orien
Externí odkaz:
https://doaj.org/article/cada113adc9e4143809a90143adbbafc
Autor:
Dmitry M. Mitin, Alexey D. Bolshakov, Vladimir Neplokh, Alexey M. Mozharov, Sergei A. Raudik, Vladimir V. Fedorov, Konstantin Yu. Shugurov, Vladimir Yu. Mikhailovskii, Pramod M. Rajanna, Fedor S. Fedorov, Albert G. Nasibulin, Ivan S. Mukhin
Publikováno v:
Energy Science & Engineering, Vol 8, Iss 8, Pp 2938-2945 (2020)
Abstract Attempts to improve solar cells efficiency touch all its constituents and are directly related to their fabrication protocols. While the most promising material platform for high efficiency photovoltaic devices is still III‐V semiconductor
Externí odkaz:
https://doaj.org/article/536a54f09b304083b0aba736f4edfa31
Autor:
Alexey Kuznetsov, Prithu Roy, Valeriy M. Kondratev, Vladimir V. Fedorov, Konstantin P. Kotlyar, Rodion R. Reznik, Alexander A. Vorobyev, Ivan S. Mukhin, George E. Cirlin, Alexey D. Bolshakov
Publikováno v:
Nanomaterials, Vol 12, Iss 2, p 241 (2022)
Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nano
Externí odkaz:
https://doaj.org/article/3e14a814e70d443bbc05e6f6b00d9120
Autor:
Alexey D. Bolshakov, Alexey M. Mozharov, Georgiy A. Sapunov, Igor V. Shtrom, Nickolay V. Sibirev, Vladimir V. Fedorov, Evgeniy V. Ubyivovk, Maria Tchernycheva, George E. Cirlin, Ivan S. Mukhin
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 146-154 (2018)
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our st
Externí odkaz:
https://doaj.org/article/3e982dbd8ac74bbe95a99adaad31d2a5
Autor:
Boris B. Krichevtsov, Sergei V. Gastev, Sergey M. Suturin, Vladimir V. Fedorov, Alexander M. Korovin, Viktor E. Bursian, Alexander G. Banshchikov, Mikhail P. Volkov, Masao Tabuchi, Nikolai S. Sokolov
Publikováno v:
Science and Technology of Advanced Materials, Vol 18, Iss 1, Pp 351-363 (2017)
Thin (4–20 nm) yttrium iron garnet (Y3Fe5O12, YIG) layers have been grown on gadolinium gallium garnet (Gd3Ga5O12, GGG) 111-oriented substrates by laser molecular beam epitaxy in 700–1000 °C growth temperature range. The layers were found to hav
Externí odkaz:
https://doaj.org/article/d41532d64c7a47c4935b7c1bc673f12a
Autor:
Vladimir V. Fedorov, Yury Berdnikov, Nickolay V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, Georgiy A. Sapunov, Liliia N. Dvoretckaia, George Cirlin, Demid A. Kirilenko, Maria Tchernycheva, Ivan S. Mukhin
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 1949 (2021)
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed
Externí odkaz:
https://doaj.org/article/2d89a5d969e5403fb6dfec3099014da3
Autor:
Olga Yu. Koval, Vladimir V. Fedorov, Alexey D. Bolshakov, Igor E. Eliseev, Sergey V. Fedina, Georgiy A. Sapunov, Stanislav A. Udovenko, Liliia N. Dvoretckaia, Demid A. Kirilenko, Roman G. Burkovsky, Ivan S. Mukhin
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 960 (2021)
Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of
Externí odkaz:
https://doaj.org/article/12416cb40d8d4377a144d430d8ff235b
Autor:
Olga Yu. Koval, Vladimir V. Fedorov, Alexey D. Bolshakov, Sergey V. Fedina, Fedor M. Kochetkov, Vladimir Neplokh, Georgiy A. Sapunov, Liliia N. Dvoretckaia, Demid A. Kirilenko, Igor V. Shtrom, Regina M. Islamova, George E. Cirlin, Maria Tchernycheva, Alexey Yu. Serov, Ivan S. Mukhin
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2110 (2020)
Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured
Externí odkaz:
https://doaj.org/article/edfd9b65731041f383fb54b6a018740e
Autor:
Alexey Kuznetsov, Prithu Roy, Dmitry V. Grudinin, Valeriy M. Kondratev, Svetlana A. Kadinskaya, Alexandr A. Vorobyev, Konstantin P. Kotlyar, Evgeniy V. Ubyivovk, Vladimir V. Fedorov, George E. Cirlin, Ivan S. Mukhin, Aleksey V. Arsenin, Valentyn S. Volkov, Alexey D. Bolshakov
Publikováno v:
Nanoscale. 15:2332-2339
Effects promoted by a Ga optical nanoantenna on self-assembled GaP nanowires including field confinement, enhanced internal reflection and antenna effect are explored. The perspectives for nanophotonic emitters, waveguides and couplers are discussed.