Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Vladimir Tvarozek"'
Autor:
Erik Vavrinsky, Viera Stopjakova, Martin Donoval, Martin Daricek, Helena Svobodova, Jozef Mihalov, Michal Hanic, Vladimir Tvarozek
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 15, Iss 2, Pp 184-191 (2017)
This article describes successive development of electrodermal activity monitoring sensor system. Our aim is to improve existing systems to be more practical and suitable for long-term monitoring. Therefore, compared to conventional devices, our syst
Externí odkaz:
https://doaj.org/article/a0475809ed694add90c5c6627971e071
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 5, Iss 1, Pp 330-333 (2006)
ZnO is shortly reviewed as significant material for nanotechnology. Sputtered ZnO thin films showed colummarpolycrystalline structure with preffered orientation in direction, resistivity ~ 1 Wcm and optical bandgap Eg = 3,33 eV. Nanoclusters of Au an
Externí odkaz:
https://doaj.org/article/3df483cb82444943b88cefa8be8704d0
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 7, Iss 1 - 2, Pp 382-384 (2008)
High transparent and conductive, aluminium - doped zinc oxide thin films (ZnO:Al), were prepared by radio –frequency (RF) diode sputtering from ZnO+2 wt. % Al2O3 target on Eutal glass substrates. Surfaces of the samples weretreated by various techn
Externí odkaz:
https://doaj.org/article/3530a611913c4bee87794b5eb110c75f
Autor:
Vladimir Tvarozek, Pavol Sutta, Sona Flickyngerova, Ivan Novotny, Pavol Gaspierik, Marie Netrvalova, Erik Vavrinsky
Publikováno v:
Semiconductor Technologies
AZO thin films sputtered at power density of 4.4 x 104 W/m2, substrate temperature of 200ºC and annealed in the forming gas at 400ºC showed a highly (002) oriented crystalline structure with the larger grains. Optimal substrate temperature could no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd0e9fc9976a69049d5f45255a46cf74
http://www.intechopen.com/articles/show/title/preparation-of-transparent-conductive-azo-thin-films-for-solar-cells
http://www.intechopen.com/articles/show/title/preparation-of-transparent-conductive-azo-thin-films-for-solar-cells
Autor:
Martin Donoval, Vladimir Tvarozek, Viera Stopjakova, Helena Svobodova, Michal Hanic, Martin Daricek, Jozef Mihalov, Erik Vavrinsky
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 15, Iss 2, Pp 184-191 (2017)
This article describes successive development of electrodermal activity monitoring sensor system. Our aim is to improve existing systems to be more practical and suitable for long-term monitoring. Therefore, compared to conventional devices, our syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67cbb8ba9b9f6679e7e1c0fbc579304d
http://advances.utc.sk/index.php/AEEE/article/view/2021
http://advances.utc.sk/index.php/AEEE/article/view/2021
Autor:
Miroslav Mikolášek, Pavol Šutta, M. Matejovic, Martin Donoval, Jaroslav Kováč, Vladimir Tvarozek, S. Sedlak, Helena Svobodova, Erik Vavrinsky, Tomas Zavodnik, Martin Kopáni
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
V této práci se popisují naše počáteční experimenty ve vývoji „on-line“ senzoru na monitoring koncentrace citrátu sodného (Na3C6H2O7) v mimo mozkovém proudění krve v průběhu hemodialýzy. Přesný a rychlý monitoring by umožnil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ba19913ebe350edffe95fe39d63d7e6
https://doi.org/10.1109/asdam.2018.8544574
https://doi.org/10.1109/asdam.2018.8544574
Autor:
Sona Kovacova, Krasimira Shtereva, Ondrej Szabo, Marian Vojs, Ivan Novotny, Jaroslav Kováč, Vladimir Tvarozek
Publikováno v:
2017 40th International Spring Seminar on Electronics Technology (ISSE).
The electrical and optical characteristics of polycrystalline films zinc oxide:gallium, implanted consecutively with 40 keV and 80 keV nitrogen at doses of 1×1015 or 1×1016 cm−2 (ZnO:Ga:N+), have been investigated. In photoluminescence spectra (P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::185f7b90bfa56bd8264b6ce9756e4fd7
https://doi.org/10.1109/isse.2017.8000879
https://doi.org/10.1109/isse.2017.8000879
Autor:
Vladimir Tvarozek, Peter Schaaf, D. Rossberg, Ivan Novotny, S. Flickyngerova, Marie Netrvalová, Pavol Šutta
Publikováno v:
Applied Surface Science. 312:167-171
The sequential sputtering technology was developed for the formation of transparent and conductive ZnO ultrathin films (doped by Al, Ga) of thicknesses about 100 nm. When comparing continuous and sequential deposition modes, the latter increased the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c2b7f0fce5b0a52faa670f16a8b2d6
https://doi.org/10.1016/j.apsusc.2014.05.121
https://doi.org/10.1016/j.apsusc.2014.05.121
Autor:
Pavol Šutta, Marie Netrvalová, P. Gaspierik, Ivan Novotny, Jaroslav Bruncko, S. Flickyngerova, Vladimir Tvarozek, Ivo Vávra
Publikováno v:
Physics Procedia. 32:456-463
RF diode sputtering of ZnO:Ga thin films by three types of deposition at constant oblique-angle (80°) configuration is presented: simple oblique deposition, oblique depositions by substrate sequential turning around the substrate normal - double by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d04f80e901a5a827dfa6d4b29f3cb742
https://doi.org/10.1016/j.phpro.2012.03.585
https://doi.org/10.1016/j.phpro.2012.03.585
Autor:
Vladimir Tvarozek, Ivan Novotny, Jaroslav Bruncko, Marie Netrvalová, P. Gaspierik, Pavol Šutta, S. Flickyngerova
Publikováno v:
Vacuum. 86:703-706
In this article the modification of surface morphology of ZnO:Ga (GZO) thin films by ion sputter etching is presented. GZO thin films were prepared at room temperature on Corning glass substrates by both normal and oblique angle RF diode sputtering f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa80e13faf42f238275d5dfe98673fc
https://doi.org/10.1016/j.vacuum.2011.07.030
https://doi.org/10.1016/j.vacuum.2011.07.030