Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Vladimir Rumyantsev"'
Autor:
Julia Galeeva, Vladislav Babenko, Ramiz Bakhtyev, Vladimir Baklaushev, Larisa Balykova, Pavel Bashkirov, Julia Bespyatykh, Anna Blagonravova, Daria Boldyreva, Dmitry Fedorov, Ilshat Gafurov, Raushaniya Gaifullina, Elena Galova, Alina Gospodaryk, Elena Ilina, Konstantin Ivanov, Daria Kharlampieva, Polina Khromova, Ksenia Klimina, Konstantin Kolontarev, Nadezhda Kolyshkina, Andrey Koritsky, Vyacheslav Kuropatkin, Vasily Lazarev, Alexander Manolov, Valentin Manuvera, Daria Matyushkina, Maxim Morozov, Ekaterina Moskaleva, Varvara Musarova, Oleg Ogarkov, Elizaveta Orlova, Alexander Pavlenko, Alla Petrova, Natalia Pozhenko, Dmitry Pushkar, Alexander Rumyantsev, Sergey Rumyantsev, Vladimir Rumyantsev, Lyubov Rychkova, Alexander Samoilov, Irina Shirokova, Vyacheslav Sinkov, Svetlana Solovieva, Elizaveta Starikova, Polina Tikhonova, Galina Trifonova, Alexander Troitsky, Alexander Tulichev, Yuri Udalov, Anna Varizhuk, Alexander Vasiliev, Vladimir Veselovsky, Rinat Vereshchagin, Alexey Volnukhin, Gaukhar Yusubalieva, Vadim Govorun
Publikováno v:
Data in Brief, Vol 40, Iss , Pp 107770- (2022)
The SARS-CoV-2 pandemic is a big challenge for humanity. The COVID-19 severity differs significantly from patient to patient, and it is important to study the factors protecting from severe forms of the disease. Respiratory microbiota may influence t
Externí odkaz:
https://doaj.org/article/06bdecddeb46401b82bef5f9bbb85aa4
Autor:
Anton Ikonnikov, Vladimir Rumyantsev, Mikhail Sotnichuk, N Mikhailov, Sergey Alekseevich Dvoretsky, Vasily Semenovich Varavin, Maxim Vitalievich Yakushev, Sergey Morozov, Vladimir Gavrilenko
Publikováno v:
Semiconductor Science and Technology.
The arsenic impurity is widely considered to be the best choice for p-type doping of HgCdTe ternary alloys, which has been a formidable problem for decades. This work studies the terahertz photoconductivity (PC) of Hg1–xCdxTe with x ~ 0.22 doped wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c526e345928052eb32e278a6b3c273
https://doi.org/10.1088/1361-6641/acda58
https://doi.org/10.1088/1361-6641/acda58
Autor:
V. I. Gavrilenko, T. A. Uaman Svetikova, S. A. Dvoretskii, A. V. Ikonnikov, S. V. Morozov, Nikolay N. Mikhailov, Vladimir Rumyantsev, M. S. Zholudev, A. A. Razova, D. V. Kozlov
Publikováno v:
JETP Letters. 113:402-408
The terahertz photoconductivity of narrow-gap Hg1 – xCdxTe alloys that originates from shallow double acceptors formed by mercury vacancies is investigated. The discrete spectrum of these acceptors and the matrix elements of the optical transitions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1385100ac93c5df4be520fd58cf7d222
https://doi.org/10.1134/s0021364021060072
https://doi.org/10.1134/s0021364021060072
Autor:
Vladimir Rumyantsev, V. Ya. Aleshkin, V. I. Gavrilenko, S. V. Morozov, Nikolay N. Mikhailov, Mikhail A. Fadeev, S. A. Dvoretskii, V. V. Utochkin, A. A. Razova
Publikováno v:
Technical Physics Letters. 47:154-157
An express technique for characterizing narrow-gap waveguide heterostructures with the HgCdTe/CdHgTe quantum wells is proposed, which is based on an analysis of their room-temperature luminescence response. Advantages and constraints of this characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693b2050017697a320c9c504c52c0cb1
https://doi.org/10.1134/s1063785021020115
https://doi.org/10.1134/s1063785021020115
Autor:
V. Ya. Aleshkin, Nikolay N. Mikhailov, Vladimir Rumyantsev, N. S. Kulikov, K. E. Kudryavtsev, S. A. Dvoretskii, Mikhail A. Fadeev, A. A. Razova, L. A. Kushkov, S. V. Morozov, V. V. Utochkin, Alexander A. Dubinov, V. I. Gavrilenko
Publikováno v:
Semiconductors. 54:1365-1370
Stimulated emission based on interband transitions depending on the pumping wavelength is studied for heterostructures with Hg(Cd)Te/CdHgTe quantum wells in the wavelength region of 3–4 μm. The minimal value of the threshold power density and maxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8ec08793583d81188b52a2652f622f1
https://doi.org/10.1134/s106378262010019x
https://doi.org/10.1134/s106378262010019x
Autor:
Sergey A. Dvoretsky, Vladimir Rumyantsev, V. V. Utochkin, N. S. Kulikov, Alexander A. Dubinov, A. A. Razova, Nikolay N. Mikhailov, S. V. Morozov, Mikhail A. Fadeev, V. Ya. Aleshkin, V. I. Gavrilenko
Publikováno v:
Semiconductors. 54:1371-1375
In two waveguide heterostructures with quantum-well arrays of Hg0.892Cd0.108Te/Cd0.63Hg0.37Te with a thickness of 6.1 nm and Hg0.895Cd0.105Te/Cd0.66Hg0.34Te with a thickness of 7.4 nm, stimulated emission is first obtained at wavelengths of 10.3 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f53bd57be93396579a2248af8b7e848a
https://doi.org/10.1134/s1063782620100322
https://doi.org/10.1134/s1063782620100322
Autor:
Sergey M. Sergeev, Vladimir Rumyantsev, A. A. Razova, Nikolay N. Mikhailov, V. I. Gavrilenko, K. V. Maremyanin, S. A. Dvoretskii, S. V. Morozov
Publikováno v:
Semiconductors. 54:1096-1102
The photoresponse is investigated in the frequency range of 0.15–15 THz in HgCdTe epitaxial layers with a cadmium concentration from 15.2 to 19.2% grown by molecular-beam epitaxy. It is shown that narrow-gap and gapless HgCdTe solid solutions can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e4caeeaeed4b70ed7bc219610cb38b1
https://doi.org/10.1134/s1063782620090249
https://doi.org/10.1134/s1063782620090249
Autor:
V. V. Utochkin, Vladimir Rumyantsev, V. V. Preobrazhenskii, Alexander A. Dubinov, V. I. Gavrilenko, V. Ya. Aleshkin, Sergey S. Krishtopenko, B. R. Semyagin, Mikhail A. Fadeev, S. V. Morozov, Mikhail A. Putyato, E. A. Emelyanov
Publikováno v:
Semiconductors. 54:1119-1122
The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d22e00e658f0f917f3891f4028729953
https://doi.org/10.1134/s1063782620090304
https://doi.org/10.1134/s1063782620090304
Autor:
V. Ya. Aleshkin, S. V. Morozov, Andrey P. Fokin, K. V. Maremyanin, Vladimir V. Parshin, Vladimir Rumyantsev, K. E. Kudryavtsev, M. Yu. Glyavin, Gregory G. Denisov, Alexander A. Dubinov, E. A. Serov, S. S. Morosov
Publikováno v:
Semiconductors. 54:1069-1074
The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b90fed62ba823f1dc8b0cfafe8ede3
https://doi.org/10.1134/s1063782620090195
https://doi.org/10.1134/s1063782620090195
Autor:
Vladimir Rumyantsev, Roman M. Rozental, Irina V. Zotova, S. V. Morozov, Andrey P. Fokin, Mikhail Yu. Glyavin, Andrey M. Malkin, A. S. Sergeev
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 41:1245-1251
The effect of frequency multiplication was investigated for a fundamental-harmonic 0.263-THz kW-level gyrotron, in which a certain fraction of its radiation was observed experimentally at the doubled operating frequency. Accurate measurements of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a0da878311711a856b5a8579de2b3af
https://doi.org/10.1007/s10762-020-00726-x
https://doi.org/10.1007/s10762-020-00726-x