Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Vladimir Privezentsev"'
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:833-840
In this paper, we present a study of the structure and composition of quartz sequentially implanted with Zn and F and annealed in an inert Ar medium. Fused silica plates with a size of 10 × 10 mm are implanted with a dose of 5 × 1016 cm–2, first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c5df95f2e7d3fa473b5e01f925c6203
https://doi.org/10.1134/s1027451021040376
https://doi.org/10.1134/s1027451021040376
Nanoparticle Formation in Si Implanted with Zinc and Oxygen Ions With Subsequent Annealing in Vacuum
Autor:
Vladimir Privezentsev, A. Yu. Trofonov, V. I. Zinenko, O. S. Zilova, A. N. Tereshchenko, Dmitry A. Kiselev, V. S. Kulikauskas, T. S. Il’ina, A. N. Palagushkin, A. A. Burmistrov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:453-460
Nanoparticle formation in silicon subsequently doped with Zn and О ions and annealed in vacuum is presented in this paper. Standard n-type Si plates with the (100) orientation, a thickness of 380 nm, and a diameter of 76 mm and grown by the Czochral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a195817bdde715b19913a30bfcc1dcb8
https://doi.org/10.1134/s1027451021030150
https://doi.org/10.1134/s1027451021030150
Autor:
O. S. Zilova, A. V. Goryachev, A. P. Sergeev, Vladimir Privezentsev, A. A. Burmistrov, A. A. Batrakov, E. P. Kirilenko
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:4581-4591
The impurity cluster formation in 64Zn+ ion hot-implanted and subsequently thermal-oxidized Si substrates are studied. After implantation on sample surface and in sample near-surface layer, the metallic Zn clusters with the average size near 200 nm o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7ab5afb3d8d142c7706eedb1f0d1200
https://doi.org/10.1007/s10854-020-05199-1
https://doi.org/10.1007/s10854-020-05199-1
Autor:
V. S. Kulikauskas, Dmitry A. Kiselev, A. P. Sergeev, A. N. Tereshchenko, Vladimir Privezentsev, A. Yu. Trifonov
Publikováno v:
Semiconductors. 54:1650-1656
Czochralski-grown Si substrates (n-type, orientation (100)) are subjected to double implantation, notably, initially by 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 50 keV and then with 16O+ ions with a dose of 2 × 1017 cm–2 and an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5560e4235803506122cf06a472efbbd3
https://doi.org/10.1134/s1063782620120313
https://doi.org/10.1134/s1063782620120313
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:1133-1138
The local structure of Zn in Al2O3 is studied by the X-ray absorption fine structure (XAFS) method after the implantation of Zn ions and thermal oxidation, which results in the formation of nanoparticles in sapphire. Based on the data of X-ray absorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c655515d11cd0e41a9e25bfa9635636
https://doi.org/10.1134/s1027451020060063
https://doi.org/10.1134/s1027451020060063
Autor:
Kirill D. Shcherbachev, A. N. Palagushkin, Vladimir Privezentsev, N. Yu. Tabachkova, E. V. Khramov
Publikováno v:
Journal of Electronic Materials. 49:7343-7348
Due to their tunable current–voltage characteristics, Zn-doped thin SiO2 films are promising for microelectronic devices, e.g., memristors. In this work we studied single-crystal Si (100) substrates with 200 nm SiO2 surface layers implanted with 64
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb94207030d6079411755b82a132e59f
https://doi.org/10.1007/s11664-020-08454-7
https://doi.org/10.1007/s11664-020-08454-7
Autor:
A. V. Golubkin, A. Yu. Trifonov, V. S. Kulikauskas, A. A. Burmistrov, Vladimir Privezentsev, A. N. Tereshchenko, O. S. Zilova, T. S. Il’ina, Dmitry A. Kiselev, A. N. Palagushkin
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:1072-1080
The results of the synthesis of metallic zinc nanoparticles (NPs) and its oxide in amorphous quartz, implanted with 64Zn+ ions with an energy of 50 keV and a dose of 5 × 1016/cm2, and isochronously annealed in oxygen with a step of 100°C for 1 hour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9115c8f18f32b5c9402864af3e6b4e30
https://doi.org/10.1134/s1027451020050377
https://doi.org/10.1134/s1027451020050377
Autor:
V. S. Kulikauskas, Vladimir Privezentsev, O. S. Zilova, Kirill D. Shcherbachev, N. Yu. Tabachkova, A. A. Burmistrov, K. B. Eidelman, V.A. Skuratov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 460:56-59
The single crystal CZ n-Si(1 0 0) substrates were implanted by 64Zn+ ions with a fluence of 5 × 1016/cm2 and energy of 50 keV to form Zn nanoparticle (NP). During implantation, the Si substrate the temperature was constant at about 350 °C. After th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28256b5def4148b9f0905b829124f912
https://doi.org/10.1016/j.nimb.2019.01.040
https://doi.org/10.1016/j.nimb.2019.01.040
Autor:
V.A. Skuratov, V. S. Kulikauskas, A. N. Tereshchenko, Dmitry A. Kiselev, A. N. Palagushkin, E. A. Steinman, A. A. Burmistrov, Vladimir Privezentsev, O. S. Zilova, V. V. Zatekin
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:1332-1339
The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO2 film is studied. The implantation of Zn ions is found to result in the formation of amorphous zinc nanoparticles around
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bfab597dedd443d340a30f80dce1ab2
https://doi.org/10.3103/s1062873819110194
https://doi.org/10.3103/s1062873819110194
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:734-739
A computer study of the morphological characteristics of the AFM image of a self-organized system of surface hillocks in CZ n-Si (100) samples doped with zinc under conditions of hot implantation and oxidized at elevated temperatures is performed. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01be97edacc0d4e2dcaf06b22727a2dd
https://doi.org/10.1134/s1027451019040360
https://doi.org/10.1134/s1027451019040360