Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Vladimir Poborchii"'
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16129fc71ba34a51ed61630d57e7bf2e
https://doi.org/10.2139/ssrn.4244613
https://doi.org/10.2139/ssrn.4244613
Autor:
Junichi Hattori, Hiroyuki Ishii, Pavel I. Geshev, Vladimir Poborchii, Toshifumi Irisawa, Wen Hsin Chang, Tatsuro Maeda, J. Groenen
Publikováno v:
Nanoscale. 13(21)
Nanoelectronics require semiconductor nanomaterials with high electron mobility like Ge nanolayers. Phonon and electron states in nanolayers undergo size-dependent changes induced by confinement and surface effects. Confined electrons and acoustic ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e3729e17d36ca7ec54d86345a62ce39
https://pubmed.ncbi.nlm.nih.gov/34018526
https://pubmed.ncbi.nlm.nih.gov/34018526
Autor:
Vladimir, Poborchii, Mohammed, Bouabdellaoui, Noriyuki, Uchida, Antoine, Ronda, Isabelle, Berbezier, Thomas, David, Carmen M, Ruiz, Mimoun, Zazoui, Robert Paria, Sena, Marco, Abbarchi, Luc, Favre
Publikováno v:
Nanotechnology. 31(19)
All-dielectric photonics is a rapidly developing field of optics and material science. The main interest at visible and near-infrared frequencies is light management using high-refractive-index Mie-resonant dielectric particles. Most work in this are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::040a77775e1d27527e96bbbb5e88e934
https://pubmed.ncbi.nlm.nih.gov/31931487
https://pubmed.ncbi.nlm.nih.gov/31931487
Autor:
Zhandos N. Utegulov, Pavel I. Geshev, Yoshinobu Miyazaki, Tetsuya Tada, Noriyuki Uchida, Alexey Volkov, Vladimir Poborchii
Publikováno v:
International Journal of Heat and Mass Transfer. 123:137-142
In contrast to known Raman-thermometric measurements of thermal conductivity (k) of suspended Si nano-membranes, here we apply Raman thermometry for k measurement of mono- and nano-crystalline Si films on quartz, which is important for applications i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29389e43a5916ab7e8858e7036b4a22c
https://doi.org/10.1016/j.ijheatmasstransfer.2018.02.074
https://doi.org/10.1016/j.ijheatmasstransfer.2018.02.074
Publikováno v:
Materials Science in Semiconductor Processing. 83:107-114
The Ge deposition on Si(111) at the very high temperature of 900 °C is accompanied by an intense Si-Ge interdiffusion and leads to the formation of three-dimensional (3D) structures, such as flat islands and lateral nanowires located on wide atomica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ebccbe31a2aba6cd1cbbdc77a67be97
https://doi.org/10.1016/j.mssp.2018.04.026
https://doi.org/10.1016/j.mssp.2018.04.026
Autor:
Vladimir Poborchii, Yukinori Morita, Tetsuya Tada, Geshev, Pavel I., Utegulov, Zhandos N., Volkov, Alexey
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 15, p154302-1-154302-7, 7p
Autor:
Mohammed Bouabdellaoui, Antoine Ronda, Isabelle Berbezier, Mimoun Zazoui, Marco Abbarchi, Noriyuki Uchida, Robert Paria Sena, Vladimir Poborchii, Luc Favre, Thomas David, Carmen M. Ruiz
Publikováno v:
Nanotechnology
Nanotechnology, Institute of Physics, 2020, 31 (19), pp.195602. ⟨10.1088/1361-6528/ab6ab8⟩
Nanotechnology, 2020, 31 (19), pp.195602. ⟨10.1088/1361-6528/ab6ab8⟩
Nanotechnology, Institute of Physics, 2020, 31 (19), pp.195602. ⟨10.1088/1361-6528/ab6ab8⟩
Nanotechnology, 2020, 31 (19), pp.195602. ⟨10.1088/1361-6528/ab6ab8⟩
All-dielectric photonics is a promptly developing field of optics and material science. The main interest at visible and near-infrared frequencies is light management using high-refractive-index Mie-resonant dielectric particles. Most work in this ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21fab55de3d278a5422953048531ad0a
https://doi.org/10.1088/1361-6528/ab6ab8
https://doi.org/10.1088/1361-6528/ab6ab8
Autor:
J. Groenen, Wen Hsin Chang, Noriyuki Uchida, Vladimir Poborchii, Toshifumi Irisawa, Tatsuro Maeda, Hiroyuki Ishii, Pavel I. Geshev
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials
International Conference on Solid State Devices and Materials
International Conference on Solid State Devices and Materials, Sep 2018, Tokyo, Japan. pp.233-234
International Conference on Solid State Devices and Materials
International Conference on Solid State Devices and Materials, Sep 2018, Tokyo, Japan. pp.233-234
International audience; Recent findings show significant enhancement of both the 488nm-excitation Raman signal and the electron mobility as ultrathin-body Ge-on-insulator (UTB GeOI) thickness (TGeOI) scaling below 13nm [1,2]. These phenomena could be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb332ca236148837ed5b1c155d3fbd13
https://doi.org/10.7567/ssdm.2018.c-8-06
https://doi.org/10.7567/ssdm.2018.c-8-06
Publikováno v:
Journal of Applied Physics. 126:123102
Submicrometer-sized high-index Mie resonators attract significant interest in photonic applications due to their capabilities to manipulate light. 2-dimensional metamaterials or metasurfaces consisting of arrays of such resonators on a device surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e2034379aa5bddada01646fcc861d4
https://doi.org/10.1063/1.5103179
https://doi.org/10.1063/1.5103179
Publikováno v:
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p104323-1-104323-5, 5p, 1 Black and White Photograph, 8 Graphs