Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Vladimir P. Reva"'
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 32:1192-1206
Some problems and challenges for applications of uncooled or slightly cooled detectors (not deeper than to 77 K) for sub-THz and THz (terahertz) arrays are briefly discussed. The possibilities to involve detectors based on plasmon resonance FETs (fie
Publikováno v:
Siberian Journal of Physics. 5:59-62
The influence of the external load resistance on voltage and current sensitivities of Si n-MOSFET THz detectors at radiation frequency ν=142 GHz is investigated. The noise level in the frequency band, which is needed for real-time imaging is specifi
Autor:
Vyacheslav V. Zabudsky, I. V. Marchishin, Fiodor F. Sizov, Yu. P. Derkach, N. Ch. Talipov, T.I. Zahar’yash, A. G. Golenkov, A. G. Klimenko, Vladimir P. Reva, V. V. Vasilyev, Victor N. Ovsyuk
Publikováno v:
Infrared Physics & Technology. 45:13-23
4 × 288 heteroepitaxial mercury–cadmium telluride (MCT) linear arrays for long wavelength infrared (LWIR) applications with 28 × 25 micron diodes and charge coupled devices (CCD) silicon readouts were designed, manufactured and tested. MCT hetero
Autor:
Dmitrii G. Esaev, A. G. Klimenko, T. I. Zakhar'yash, I. V. Marchishin, A. I. Kozlov, V. V. Vasilyev, Yu. G. Sidorov, A. G. Golenkov, Sergey A. Dvoretsky, F. F. Sizov, N. Kh. Talipov, A. O. Suslyakov, Victor N. Ovsyuk, Vladimir P. Reva
Publikováno v:
Russian Microelectronics. 31:351-358
A complete production technology is developed for single-cell and array IR detectors using an MBE-grown Hg1 – x Cd x Te heteroepitaxial layer. The array detectors implement a bump-bonded flip-chip hybrid architecture. The arrays are constructed in
Autor:
V. V. Vasilyev, I. V. Sabinina, A. L. Aseev, Vladimir P. Reva, A. V. Predein, J.V. Gumenjuk-Sichevska, A. G. Golenkov, N. N. Mikhailov, S. A. Dvoretsky, A.O. Susliakov, V. S. Varavin, Yu. G. Sidorov, F. F. Sizov
Publikováno v:
Opto-Electronics Review.
The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of n+-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning ha
Publikováno v:
Detectors and Associated Signal Processing II.
Comparative analysis of four 4x288 different designed readouts elaborated at the Institute of Microdevices and the Institute of Semiconductor Physics is presented. Also some features of design 576x6 readouts adduced. All the readouts have the direct
Autor:
Nikolai H. Talipov, Alexandr O. Suslyakov, Vasiliy S. Varavin, Vladimir P. Reva, Sergei V. Korinets, Fiodor F. Sizov, Tamara I. Zakhar'yash, Vladimir V. Vasil’ev, A. G. Golenkov, Victor N. Ovsyuk, Vyacheslav V. Zabudsky, Yuriy P. Derkach, Nikolai N. Mikhailov
Publikováno v:
Semiconductor Photodetectors II.
4×288 MCT LWIR linear arrays with 28X25 μm diodes and silicon ROICs were designed, manufactured and tested. MCT layers were grown by MBE technology on (013) GaAs substrates with CdTe/ZnTe buffer layers and λ co = 11.2±0.15 μm at T = 78 K. CCD an
Publikováno v:
Semiconductor Photodetectors II.
Silicon ROIC for MCT LWIR 576x6 diode matrix arrays was designed. It includes 4 blocks of 144x6 arrays with 56x43 micron pixels. Diodes shift perpendicular to scanning direction is 0.25 of pixel size. ROICs were designed for their manufacturing by 0.
Autor:
Sergey A. Dvoretski, Yuri G. Sidorov, Fiodor F. Sizov, V. V. Vasiliev, A. G. Golenkov, J. V. Gumenyuk-Sichevska, Victor N. Ovsyuk, Vladimir P. Reva, N. K. Talipov, Vyacheslav V. Zabudsky, Yurii P. Derkach
Publikováno v:
Detectors and Associated Signal Processing.
MCT 2x64 and 4x288 linear arrays with silicon readouts were designed, manufactured and tested. (013) MCT MBE layers were grown on GaAs substrates with ZnTe and CdTe buffer layers. 2x64 arrays were also manufactured on the base of LPE layers on CdZnTe
Autor:
Yu. P. Derkach, Vladimir P. Reva, A. G. Klimenko, I. V. Marchishin, V. V. Vasilyev, Victor N. Ovsyuk, A. G. Golenkov, Vyacheslav V. Zabudsky, Yu. G. Sidorov, A. I. Kozlov, A. O. Suslyakov, C A. Dvoretski, N. Ch. Talipov, T. I. Zahar'yash, F. F. Sizov
Publikováno v:
SPIE Proceedings.
x4×288 heteroepitaxial mercury-cadmium telluride (MCT) linear arrays for long wavelength infrared (LWIR) applications with 28×25 micron diodes and charge coupled devices (CCD) silicon readouts were designed, manufactured and tested. MCT heteroepita