Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Vladimir Ovuka"'
Autor:
Davide Soranzio, Matteo Savoini, Paul Beaud, Federico Cilento, Larissa Boie, Janine Dössegger, Vladimir Ovuka, Sarah Houver, Mathias Sander, Serhane Zerdane, Elsa Abreu, Yunpei Deng, Roman Mankowsky, Henrik T. Lemke, Fulvio Parmigiani, Maria Peressi, Steven L. Johnson
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-9 (2022)
Abstract The layered transition-metal dichalcogenide WTe2 is characterized by distinctive transport and topological properties. These properties are largely determined by electronic states close to the Fermi level, specifically to electron and hole p
Externí odkaz:
https://doaj.org/article/90f037bee38c4ec9867a22113efcd9c0
Autor:
Hiroki Ueda, Hoyoung Jang, Sae Hwan Chun, Hyeong-Do Kim, Minseok Kim, Sang-Youn Park, Simone Finizio, Nazaret Ortiz Hernandez, Vladimir Ovuka, Matteo Savoini, Tsuyoshi Kimura, Yoshikazu Tanaka, Andrin Doll, Urs Staub
Publikováno v:
Physical Review Research, Vol 4, Iss 2, p 023007 (2022)
Understanding ultrafast magnetization dynamics on the microscopic level is of strong current interest due to the potential for applications in information storage. In recent years, spin-lattice coupling has been recognized as essential for ultrafast
Externí odkaz:
https://doaj.org/article/39cefa8c1dbc4b81a8601e22d47dd8c3
Autor:
Vanessa Wood, Nolan Lassaline, Marilyne Sousa, Olesya Yarema, Maksym Yarema, Ann-Katrin U. Michel, David J. Norris, Vladimir Ovuka
Publikováno v:
ACS Applied Nano Materials. 3:4314-4320
Phase-change materials (PCMs), which are well-established in optical and random-access memories, are increasingly studied for emerging topics such as brain-inspired computing and active photonics. ...
Autor:
Manuel Le Gallo, Abu Sebastian, Valeria Bragaglia, Vara Prasad Jonnalagadda, Marilyne Sousa, Vladimir Ovuka, Syed Ghazi Sarwat, Martin Salinga, Benedikt Kersting
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
Phase change memory (PCM) is being actively explored for in-memory computing and neuromorphic systems. The ability of a PCM device to store a continuum of resistance values can be exploited to realize arithmetic operations such as matrix-vector multi
Autor:
Paul Baade, Sebastian Volk, Olesya Yarema, Aleksandr Perevedentsev, Vladimir Ovuka, Maksym Yarema, Vanessa Wood
Publikováno v:
Chemistry of materials : a publication of the American Chemical Society. 30(17)
Phase-change memory materials refer to a class of materials that can exist in amorphous and crystalline phases with distinctly different electrical or optical properties, as well as exhibit outstanding crystallization kinetics and optimal phase trans