Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Vladimir N. Tsipenyuk"'
Autor:
Vladimir M. Kashkarov, Aleksandr S. Lenshin, Pavel V. Seredin, Dmitriy A. Minakov, Boris L. Agapov, Vladimir N. Tsipenyuk
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 127-130 (2016)
Porous silicon (por-Si) has a unique combination of physicochemical parameters: well-developed surface and hence high sorption. Depending on technology it is possible to form nanometer size pores and clusters in porous silicon which makes this materi
Externí odkaz:
https://doaj.org/article/b9672f8796254fbc9040e4913366e05f
Autor:
Vladimir N. Tsipenyuk, Pavel Seredin, B. L. Agapov, Aleksandr S. Lenshin, V. M. Kashkarov, Dmitriy A. Minakov
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 127-130 (2016)
Porous silicon (por-Si) has a unique combination of physicochemical parameters: well-developed surface and hence high sorption. Depending on technology it is possible to form nanometer size pores and clusters in porous silicon which makes this materi