Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Vladimir Martens"'
Publikováno v:
Вестник Северо-Кавказского федерального университета, Vol 0, Iss 3, Pp 24-27 (2022)
The technique of obtaining and the first results of studying thin crystalline silicon carbide films by deposition from a gas phase in a reactor with cold walls is presented in the article. Trimethylchlorosilane was used as the precursor material, nit
Externí odkaz:
https://doaj.org/article/1c3b1ce19d224e8e86a035a763b39f01
Publikováno v:
Вестник Северо-Кавказского федерального университета, Vol 0, Iss 2, Pp 7-12 (2022)
Films of aluminum nitride were grown by the method ofplasma-activated ALD. The impact of duration of plasma exposure stage on the growth rate, composition and microstructures was analyzed. These samples were examined by IR spectroscopy, ellipsometry
Externí odkaz:
https://doaj.org/article/865d528945794516b30a7436d81ca4eb
Autor:
Vladimir Martens
Publikováno v:
Vacuum. 203:111319
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f31a87c072b1802c2992c20f8efe6333
https://doi.org/10.1016/j.vacuum.2022.111319
https://doi.org/10.1016/j.vacuum.2022.111319
Publikováno v:
2016 14th International Baltic Conference on Atomic Layer Deposition (BALD).
Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d991e62522868b0ee68872936208d9
https://doi.org/10.1109/bald.2016.7886528
https://doi.org/10.1109/bald.2016.7886528
