Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Vladimir Korobotchko"'
Autor:
Guido Hergenhan, Jürgen Dr. Kleinschmidt, Guido Schriever, Uwe Stamm, Max C. Schürmann, D. Bolshukhin, B. Nikolaus, Vladimir M. Borisov, Christian H. Ziener, Vladimir Korobotchko, Jesko Dr. Brudermann
Publikováno v:
SPIE Proceedings.
In the paper we give an update about the development status of gas discharge produced plasma (GDPP) EUV sources at XTREME technologies. Already in 2003 first commercial prototypes of xenon GDPP sources of the type XTS 13-35 based on the Z-pinch with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf68be2be67910708dbd607c01b4a2d0
https://doi.org/10.1117/12.652989
https://doi.org/10.1117/12.652989
Autor:
Juergen Kleinschmidt, Tran Duc Chinh, Guido Hergenhan, Guido Schriever, Vladimir Korobotchko, Sven Goetze, Henry Birner, Imtiaz Ahmad, Rainer Mueller, Jens Ringling, Christian Ziener, Frank Flohrer, Uwe Stamm, Diethard Kloepfel, Björn Mader, Kai Gaebel, Denis Bolshukhin, Jesko Dr. Brudermann
Publikováno v:
SPIE Proceedings.
Semiconductor chip manufacturers are expecting to use extreme ultraviolet (EUV) lithography for high volume manufacturing of DRAMs and ICs starting by the end of this decade. Among all the technologies and modules which have to be developed EUV sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a620b775326f27a8daf5d146b1880766
https://doi.org/10.1117/12.535410
https://doi.org/10.1117/12.535410
Autor:
Christian H. Ziener, Jesko Dr. Brudermann, Vladimir Korobotchko, Frank Flohrer, Jürgen Dr. Kleinschmidt, Sven Götze, Kai Dr. Gäbel, Uwe Stamm, Guido Hergenhan, Guido Schriever, D. Bolshukhin, Imtiaz Ahmad, Diethard Klöpfel, Istvan Balogh, Henry Birner, S. Enke, Chinh Duc Prof. Tran, Jens Ringling
Publikováno v:
SPIE Proceedings.
Semiconductor chip manufacturers are expecting to use extreme UV lithography for production in 2009. EUV tools require high power, brilliant light sources at 13.5 nm with collector optics producing 120 W average power at entrance of the illuminator s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::506a64b648929274da7b635b33902a79
https://doi.org/10.1117/12.482676
https://doi.org/10.1117/12.482676
Autor:
O B Khristoforov, Alexander S. Ivanov, Guido Schriever, Vladimir M. Borisov, Juergen Kleinschmidt, Jens Ringling, Vladimir Korobotchko, Frank Flohrer, Uwe Stamm, Sven Goetze, Aleksandr Yu. Vinokhodov, Peter Koehler, Kai Gaebel, Imtiaz Ahmad, Diethard Kloepfel
Publikováno v:
Emerging Lithographic Technologies VI.
Next generation semiconductor chip manufacturing using extreme ultraviolet (EUV) lithography requires a brilliant radiation source with output power between 50 W and 120 W in intermediate focus. This is about five to ten times higher power than that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f318cebd357b14b4ed08d40b07609f91
https://doi.org/10.1117/12.472283
https://doi.org/10.1117/12.472283
Autor:
Vladimir M. Borisov, Uwe Stamm, Vladimir Korobotchko, Sven Goetze, Imtiaz Ahmad, Juergen Kleinschmidt, Aleksandr Yu. Vinokhodov, Jens Ringling, O B Khristoforov, Alexander S. Ivanov, Guido Schriever
Publikováno v:
Emerging Lithographic Technologies VI.
We report on the experimental status of the development of gas discharge produced plasma EUV sources for lithography based on the Z-pinch concept. The plasma size of approximately 1.3 mm X 1.5 mm has been matched to come close to the requirements res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51d6901da5f08ad66f1fb7ece68b47f7
https://doi.org/10.1117/12.472338
https://doi.org/10.1117/12.472338
Autor:
Imtiaz Ahmad, Vladimir Korobotchko, Peter Koehler, Guido Schriever, Kai Gaebel, Uwe Stamm, Frank Flohrer, Diethard Kloepfel, Sven Goetze, Jens Ringling, Juergen Kleinschmidt
Publikováno v:
Gas and Chemical Lasers and Intense Beam Applications III.
In this paper we discuss new results from investigations on high power EUV sources for micro-lithography based on gas discharge produced plasmas and laser produced plasmas. The EUV development is performed at XTREME technologies GmbH, a joint venture
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159755657ba2178286ca6f636a4e539a
https://doi.org/10.1117/12.465786
https://doi.org/10.1117/12.465786