List of contributors

Autor: Juan Andrés, Noé Arjona, K. Asokan, Irfan Ayoub, Susanta Bera, S. Chattopadhyay, Rajneesh Chaurasiya, Fan Chen, Rafael Aparecido Ciola Amoresi, Ubirajara Coleto Junior, Gustavo Martini Dalpian, P.K. Das, Wenjing Du, Somrita Dutta, Brahim El Filali, Vincenzo Esposito, M.A. Frechero, Keval Gadani, Muthu Kumaran Gnanamani, Minerva Guerra-Balcázar, Amin Hamed Mashhadzadeh, D. Jana, Yanyan Jiang, D. Paul Joseph, A.D. Joshi, Ahsanul Kabir, Vinayak Kamble, Hasmat Khan, Vladimir Kolkovsky, M. Kovendhan, Vijay Kumar, Rajan Kumar Singh, Mohan Lal Meena, Hui Li, Way Foong Lim, Shawn D. Lin, Wei Liu, Jiurong Liu, Elson Longo, Chung-Hsin Lu, Yingjie Ma, P. Mallick, Antonio Claudio Michejevs Padilha, M.C. Molina, A. Mondal, Atanu Naskar, S. Pal, Leinig Antonio Perazolli, Georgiy Polupan, Jothi Ramalingam Rajabathar, R. Ramarajan, Alexandre Reily Rocha, Mohammad Reza Saeb, Azam Salmankhani, A. Sarkar, Rishabh Sehgal, Rakesh Sehgal, N.A. Shah, Vishal Sharma, V.G. Shrimali, Alexandre Zirpoli Simões, P.S. Solanki, Sudipta Som, Christos Spitas, Ronald Stübner, Jayashree Swaminathan, Hendrik C. Swart, S. Terny, K. Thangaraju, Victor Buratto Tinti, Lorena Álvarez-Contreras, Tetyana V. Torchynska, Isaac Velázquez-Hernández, Zhou Wang, Fenglong Wang, Lili Wu, Daniel Zanetti de Florio, Maryam Zarghami Dehghani, Xingfan Zhang, Xue Zhang, Peiru Zheng

Publikováno v: Metal Oxide Defects ISBN: 9780323855884

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9c5e6af963096c7776abd11a70da558
https://doi.org/10.1016/b978-0-323-85588-4.01002-3

Fe‐Related Defects in Si: Laplace Deep‐Level Transient Spectroscopy Studies

Autor: Katarzyna Gwozdz, Vladimir Kolkovsky

Publikováno v: physica status solidi (a). 219:2200139

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c649f1d7a29538e4adcfe06949c9ca60
https://doi.org/10.1002/pssa.202200139

Carbon-related defects in microelectronics

Autor: R. Stübner, Vladimir Kolkovsky, Jörg Weber

Publikováno v: Microelectronics Reliability. :145-148

In the present study electrically active carbon and hydrogen-related (CH) defects, which can act as strong recombination centers in high power devices and CMOS photodetectors, are investigated in n -type Si. Several different CH-related defects are o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87ff48e342190a936b8a02c863c16208
https://doi.org/10.1016/j.microrel.2017.06.066

MOSFET Threshold Voltage Shift Induced By Ion Implantation Performed in Different Implanters

Autor: Lutz Ende, Vladimir Kolkovsky, Arnd Hurrich

Publikováno v: 2018 22nd International Conference on Ion Implantation Technology (IIT).

A shift of the threshold voltage (V th ) in high voltage metal-oxide-semiconductor field effect transistors (n-MOSFET) was observed after As-implantation performed with different types of implanters. This shift was reproducible in different wafers an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b51ef4f966f10920270e69e08e2d580a
https://doi.org/10.1109/iit.2018.8807898

Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy

Autor: Jörg Weber, R. Stübner, Nickolay Abrosimov, Vladimir Kolkovsky

Publikováno v: Solid State Phenomena. 242:184-189

A deep level transient spectroscopy (DLTS) study on n- and p-type diluted Si1-xGex alloys (x=0, 0.011, 0.026, 0.046, and 0.070) is presented. Defect levels of several carbon-hydrogen (CH) complexes are observed. The high-resolution Laplace-DLTS techn

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::906b0d66ad964639dbe59a5b00889fe1
https://doi.org/10.4028/www.scientific.net/ssp.242.184