Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Vladimir I. Trofimov"'
Autor:
A. S. Kondrat'ev, Vladimir I. Trofimov
Publikováno v:
Groups St Andrews 2017 in Birmingham
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f943ba1757cf8f92d9d56a4f945328
https://doi.org/10.1017/9781108692397.017
https://doi.org/10.1017/9781108692397.017
Publikováno v:
Materials Science and Engineering: C. 27:1397-1400
The surface spectroscopic methods, e.g. AES and XPS, are widely used in studies of thin film growth. In experiments spectroscopic data are recorded as intensity–film thickness curves. Much theoretical effort had been devoted to calculation AES inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ed9c997a969577f6f754e31e202e1a
https://doi.org/10.1016/j.msec.2006.06.035
https://doi.org/10.1016/j.msec.2006.06.035
Publikováno v:
Surface Science. 601:4465-4469
In the heteroepitaxy deposited adatoms in the first layer migrate on a substrate with a heterodiffusion coefficient, while those in all the next layers – with a self-diffusion coefficient. In this paper the effect of two different adatom surface mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5de10dbc5a9d1333036dd1f579305058
https://doi.org/10.1016/j.susc.2007.04.143
https://doi.org/10.1016/j.susc.2007.04.143
Publikováno v:
Surface Science. 601:4423-4427
Recently, promising results for epitaxial cobalt and nickel silicide formation have been obtained using a thin titanium interlayer and as a mechanism for such an interlayer promoting effect the removal of a native oxide from a silicon substrate due t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43516168646fff77352a92840416a92f
https://doi.org/10.1016/j.susc.2007.04.128
https://doi.org/10.1016/j.susc.2007.04.128
Publikováno v:
Thin Solid Films. 515:6586-6589
The initial growth stages of materials non-active to a substrate has been extensively studied for decades, whereas there had been fewer studies on the initial growth of active metals on silicon substrate, despite its technological importance. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63bd1f9ef92461c5d278d3fcd318ca8e
https://doi.org/10.1016/j.tsf.2006.11.128
https://doi.org/10.1016/j.tsf.2006.11.128
Publikováno v:
Journal of Combinatorial Theory, Series A. 114(1):110-134
The class of all connected vertex-transitive graphs forms a metric space under a natural combinatorially defined metric. In this paper we study graphs which are limit points in this metric space of the subset consisting of all finite graphs that admi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7dc6ed3026f61b9b3e6e4d0d30a3081
Autor:
Vladimir I. Trofimov
Publikováno v:
European Journal of Combinatorics. 27(5):690-700
Let Γ be a directed locally finite vertex-symmetric graph such that the underlying graph Γ¯ is connected. We prove that, in the case Γ is infinite, there exists a positive integer k, depending only on min{deg+(Γ),deg−(Γ)}, such that for any p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e38a5aa97e84e7ed83d082f5d473bb61
Publikováno v:
Thin Solid Films. 495:398-403
A model for crystallization kinetics of thin amorphous film is developed by extension the Kolmogorov–Johnson–Mehl–Avrami (KJMA) model to take into account a finite film thickness. Two model versions, volume induced crystallization (VIC) and sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8fc3b5b7075c2e40a4f2fa36b4bc8b
https://doi.org/10.1016/j.tsf.2005.08.221
https://doi.org/10.1016/j.tsf.2005.08.221
Publikováno v:
Computational Materials Science. 33:369-374
A quantitative description of mesoscopic surface roughness generated in thin film growing via 3D island mechanism is presented. Analysis is based on the statistical model of a random nucleation and growth of hemispherical islands accounting for their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6addbb7a4046bb7851f45bbfbb3162f
https://doi.org/10.1016/j.commatsci.2004.12.004
https://doi.org/10.1016/j.commatsci.2004.12.004
Publikováno v:
Computational Materials Science. 33:362-368
Recently we have proposed a simple kinetic model for layer epitaxial growth, which combines a rate equation approach and a concept of a feeding zone. With this model it has distinctively been shown on how with decreasing adatom surface diffusivity an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b1864c54cf15ba228fb41eb4fa83128
https://doi.org/10.1016/j.commatsci.2004.12.003
https://doi.org/10.1016/j.commatsci.2004.12.003