Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Vladimir Gritsenko"'
Autor:
Christian Pritz, Eyal Itskovits, Eduard Bokman, Rotem Ruach, Vladimir Gritsenko, Tal Nelken, Mai Menasherof, Aharon Azulay, Alon Zaslaver
Publikováno v:
eLife, Vol 12 (2023)
A major goal in neuroscience is to elucidate the principles by which memories are stored in a neural network. Here, we have systematically studied how four types of associative memories (short- and long-term memories, each as positive and negative as
Externí odkaz:
https://doaj.org/article/4fe896c8942c4a4cb471e00cb5117bd6
Autor:
Alexander Goltsev, Vladimir Gritsenko
Publikováno v:
ELCVIA Electronic Letters on Computer Vision and Image Analysis, Vol 21, Iss 1 (2022)
A structure and functioning mechanisms of a neural network with competitive layers are described. The network is intended to solve the character recognition task. The network consists of several competitive layers of neurons. Each layer is a neural n
Externí odkaz:
https://doaj.org/article/75cf3d5e6ba44ede8fa0731ca89c3d07
Publikováno v:
Microbiology Spectrum, Vol 9, Iss 2 (2021)
ABSTRACT The high morbidity and mortality of cryptococcal meningitis is due to the limited range of therapeutic options: only three classes of antifungal drugs are available (polyenes [amphotericin B], azoles [fluconazole], and pyrimidine analogues [
Externí odkaz:
https://doaj.org/article/e187214c86ed473f8539cb99c8e6a344
Autor:
Feng Yang, Vladimir Gritsenko, Yaniv Slor Futterman, Lu Gao, Cheng Zhen, Hui Lu, Yuan-ying Jiang, Judith Berman
Publikováno v:
mBio, Vol 12, Iss 4 (2021)
ABSTRACT How cells exposed to one stress are later able to better survive other types of stress is not well understood. In eukaryotic organisms, physiological and pathological stresses can disturb endoplasmic reticulum (ER) function, resulting in “
Externí odkaz:
https://doaj.org/article/049ece0840e44c8792496e6c6d300248
Publikováno v:
Nanomaterials, Vol 12, Iss 2, p 261 (2022)
High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·
Externí odkaz:
https://doaj.org/article/88a39cd28e5c4d57a92646e583041c85
Publikováno v:
Nanomaterials, Vol 11, Iss 6, p 1401 (2021)
Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides
Externí odkaz:
https://doaj.org/article/7c4efbe77af540c38f9534c7ac8fed4f
Publikováno v:
Nanomaterials, Vol 11, Iss 1, p 92 (2021)
Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional b
Externí odkaz:
https://doaj.org/article/f804b23de93b48a78c0fe5759b601363
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2145 (2020)
Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a h
Externí odkaz:
https://doaj.org/article/f183a9ef252b45a29a78c14c4ab0d954
Autor:
Ella Shtifman Segal, Vladimir Gritsenko, Anton Levitan, Bhawna Yadav, Naama Dror, Jacob L. Steenwyk, Yael Silberberg, Kevin Mielich, Antonis Rokas, Neil A. R. Gow, Reinhard Kunze, Roded Sharan, Judith Berman
Publikováno v:
mBio, Vol 9, Iss 5 (2018)
ABSTRACT Knowing the full set of essential genes for a given organism provides important information about ways to promote, and to limit, its growth and survival. For many non-model organisms, the lack of a stable haploid state and low transformation
Externí odkaz:
https://doaj.org/article/93849fe3376347c2b111ba66ca743a9a
Publikováno v:
SID Symposium Digest of Technical Papers. 53:393-395