Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Vladimir Faifer"'
Publikováno v:
ECS Transactions. 13:37-43
A non-contact method for measurement of sheet resistance and leakage current (RsL) for ultra-shallow junction characterization is described where high-density (30,000 pixel) sheet resistance maps provide detailed evaluation of local and global variat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2effa7ad7f63158a64808af3ff3c801
https://doi.org/10.1149/1.2911483
https://doi.org/10.1149/1.2911483
Publikováno v:
ECS Transactions. 11:135-147
A non-contact method for measurement of sheet resistance and leakage current (RsL) for ultra-shallow junction (USJ) characterization is described based on analysis of frequency-dependent junction photovoltages from p-n junctions . Theoretical, device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a85abe753f3f65b7a675f89f64584dc6
https://doi.org/10.1149/1.2778656
https://doi.org/10.1149/1.2778656
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Thin film photovoltaics, such as those based on CdTe and CIGS, exhibit both intentional and unintentional spatial variations in electronic properties which can have a profound impact on device performance. Here, we expand upon the techniques of elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604e467e1ceaa886482a37586d873d57
https://doi.org/10.1109/pvsc.2011.6185847
https://doi.org/10.1109/pvsc.2011.6185847
Autor:
Jeffri Halim, Akira Mineji, Vladimir Faifer, Michael Current, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
High spatial resolution sheet resistance measurements, based on analysis of junction photo‐voltage (JPV) signals, are used to reveal subtle dose uniformity variations for 40 and 90 keV Boron implants in the dose range of 1011 B/cm2. The use of vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c6230caa3cf9ab0ee9078c921e83027
https://doi.org/10.1063/1.3033585
https://doi.org/10.1063/1.3033585
Autor:
Robert J. Hillard, Alain Moussa, Rong Lin, Vladimir Faifer, Trudo Clarysse, Dirch Hjorth Petersen, M. C. Benjamin, Roger Loo, Michael I. Current, Frederik Leys, Wilfried Vandervorst
Publikováno v:
MRS Proceedings. 912
Comparison of state-of-the-art zero-penetration sheet resistance tools on ultra-shallow Boron CVD layers on top of a medium doped As layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8caea6fdb0ae45dd7bb6a518779c3d8
https://doi.org/10.1557/proc-0912-c05-07
https://doi.org/10.1557/proc-0912-c05-07
Publikováno v:
MRS Proceedings. 945
A non-contact metrology for electrical char acterization of p-n junctions has been developed for use on photo-voltaic materials. By analysis of junction photo-voltage (JPV) measurements at multiple light beam modulation frequencies and multiple light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b0966c77c924c2d005fc1da97f977d7
https://doi.org/10.1557/proc-0945-ff06-10
https://doi.org/10.1557/proc-0945-ff06-10
Autor:
Dale C. Jacobson, Julien Venturini, Wade A. Krull, M. C. Benjamin, Michael I. Current, Akira Mineji, Jeff Gelpey, Vladimir Faifer, James T. C. Chen, S. McCoy, Tom Walker, Zhiqiang Li, Silke Paul, Masayasu Tanjyo, Robert J. Hillard, John Borland, Wilfried Lerch, Seiichi Shishiguchi, Andrzej Buczkowski
Publikováno v:
AIP Conference Proceedings.
High dopant activation and low damage p+ ultra‐shallow junctions (USJ) 15–20nm deep for 45nm node applications have been realized using B10H14 & B18H22 implant species along with flash, laser or SPE diffusion‐less activation annealing technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab858a6d82d852e3a2a9b5e76e5a958b
https://doi.org/10.1063/1.2401470
https://doi.org/10.1063/1.2401470
Autor:
Tan Nguyen, S. H. Lau, Vitali Souchkov, Ann Koo, Georgy Mikhaylov, Vladimir Faifer, Phuc Van, Jiansong Lu, Tim Wong, Michael I. Current, Wojciech J. Walecki
Publikováno v:
MRS Proceedings. 810
A novel, non-contact method for determination of ultra-shallow junction sheet resistance and leakage current density has been developed based on monitoring the dynamics of photo-generated carriers by means of spatially separated capacitive probes. At
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68618062e6f68c2d6161c702d4b9487
https://doi.org/10.1557/proc-810-c11.9
https://doi.org/10.1557/proc-810-c11.9
Publikováno v:
Journal of Applied Physics. 108:074516
Equations describing the effect of electronic nonuniformities on electroluminescence (EL) and electron beam induced current (EBIC) images are derived and tested on Cu(In,Ga)Se2 solar cells. EL images are sensitive to fluctuations in band gap and carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9baed7abdddd23d6ac897be9a35f6fb
https://doi.org/10.1063/1.3485814
https://doi.org/10.1063/1.3485814
Publikováno v:
Applied Physics Letters. 96:222102
Equations describing the electroluminescence (EL) intensity as a function of material properties are derived for thin film solar cells and experimentally validated using Cu(In,Ga)Se2 solar cells. EL intensity at constant voltage is controlled by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f840bdb5e94a9fc18601668cb7b396
https://doi.org/10.1063/1.3443637
https://doi.org/10.1063/1.3443637