Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Vladimir Borzdov"'
Publikováno v:
Journal of Engineering Physics and Thermophysics. 87:997-1001
A technology for manufacture of a silicon Zener diode with a stabilizing voltage of 6.5 V has been proposed. The resistivity of the substrate and the regime of phosphorus diffusion into the substrate have been determined, which ensure required values
Publikováno v:
Russian Microelectronics. 43:189-193
Using the ensemble Monte Carlo method allowing for the main features of charge-carrier transport in conditions of strong electric fields, a deep-submicron silicon n-channel MOS transistor with a channel length of 50 nm is simulated. In the Keldysh im
Autor:
Vladimir Borzdov, F. Davydov, V. Vyurkov, R. Khabutdinov, Leonid Fedichkin, D. Svintsov, Igor Semenikhin, A. V. Borzdov, K. Rudenko
Publikováno v:
SPIE Proceedings.
Low-dimensional transit-time structures for terahertz generation and detection are discussed. The negative conductivity at terahertz frequencies is crucial for generation. It may arise in an array of silicon nanowires (1D), as well as in a thin silic
Publikováno v:
Pribory i Metody Izmerenij, Vol 7, Iss 2, Pp 161-168 (2016)
На сегодняшний день субмикронные МОП-транзисторные структуры кремний-на-изоляторе (КНИ) широко используются в различных электронных ус
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::942fced85ca4d3ff9bf7d2ac8234a676
https://rep.bntu.by/handle/data/24839
https://rep.bntu.by/handle/data/24839
Publikováno v:
Russian Microelectronics. 39:411-417
A Monte Carlo simulation is run to study the electron transport in a thin undoped GaAs quantum wire under the influence of a transverse applied electric field. Phonon and surface-roughness scattering are included. Electron drift velocity is investiga
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 2, Iss 4, Pp 213-218 (2007)
Nanoscale Research Letters, Vol 2, Iss 4, Pp 213-218 (2007)
In the framework of quantum perturbation theory the self-consistent method of calculation of electron scattering rates in nanowires with the one-dimensional electron gas in the quantum limit is worked out. The developed method allows both the collisi
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 33:336-342
The rates of electron scattering via phonons in the armchair single-wall carbon nanotubes were calculated by using the improved scattering theory within the tight-binding approximation. Therefore, the problem connected with the discrepancy of the sca
Publikováno v:
SPIE Proceedings.
Ensemble Monte-Carlo simulation of electron and hole transport in deep submicron n-channel SOI MOSFET with 100 nm channel length is performed. The influence of interband impact ionization process on the transistor characteristics is investigated with
Publikováno v:
Physics Letters A. 319:379-383
The approach to take into account the influence of the energy levels broadening on the intersubband acoustic phonon scattering rates is developed. The roughness of the quantum wire boundaries and the oscillations of crystal lattice atoms are treated
Autor:
Vladimir Borzdov, D. V. Pozdnyakov
Publikováno v:
Physics of the Solid State. 45:2348-2351
An approach describing the effect of energy level broadening in semiconductor quantum wires on the intensity of intersubband electron scattering by polar optical phonons is suggested. As a broadening mechanism, scattering by atomic thermal vibrations