Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Vladimir Alekseevic Gorbylev"'
Autor:
Peter V. Bulaev, A A Padalitsa, Vitalij P. Kotov, Igor Dmitrievich Zalevsky, Grachik H. Avetisyan, Vladimir Alekseevic Gorbylev, Vladimir B. Kulikov
Publikováno v:
Third Conference on Photonic Systems for Ecological Monitoring.
Low Pressure Metalorganic Chemical Vapor Deposition (LP MOCVD) epitaxial growth of InAs0.85Sb0.15 p-i-n structures for infrared photodetectors arrays is reported. Monocrystalline epitaxial layers of InAsSb were grown on semi-insulating GaAs wafers. M
Publikováno v:
SPIE Proceedings.
In this paper AlInGaAs/AlGaAs strained quantum well broad- stripe lasers with proton insulating grown by metalorganic chemical vapor deposition, lasing at 808 nm are presented. Electrical and optical characteristics and reliability of this lasers wer
Autor:
Michail Viktorovic Zverkov, Vladimir Alekseevic Gorbylev, Victor Ivanovich Krichevsky, Alexander A. Chelny, Petr Georgievich Eliseev, Alexander Yakovlevic Polyakov, Alexander Aluev, Vadim Pavlovich Konyaev
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
Visible laser diodes (LD), based on AlGaInP/GaInP/GaAs material system, are of great interest, because of large scale application in the information reading and aiming. Heterostructures for such a type of LD were grown successfully by MOCVD. As menti