Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Vladimir A. Ukraintsev"'
Publikováno v:
Nuclear Energy and Technology, Vol 6, Iss 2, Pp 83-88 (2020)
The purpose of the work is to form and discuss the key components of the methodology to obtain the quantitative indicators of the personnel reliability based on the actual long-term operation experience data for a particular power unit. The timelines
Externí odkaz:
https://doaj.org/article/c5d8646433d3475da53b1eb5b36729ae
Publikováno v:
Prostranstvennaâ Èkonomika, Iss 1, Pp 154-169 (2018)
The review of the nuclear energy technologies market, namely the main processes of the initial and final stages of the nuclear fuel cycle (NTC) was shown. The authors reveal key players in the markets of natural uranium mining, conversion, enrichment
Externí odkaz:
https://doaj.org/article/74e775ef063b4c128af66a304398b7f9
Autor:
Vladimir A. Ukraintsev, Ofer Adan
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b98f2703b0e2c664de46a7c52e45b59
https://doi.org/10.1117/12.2532423
https://doi.org/10.1117/12.2532423
Autor:
Ofer Adan, Vladimir A. Ukraintsev
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99bd5f0302c3dc05ab34d125d175508d
https://doi.org/10.1117/12.2323955
https://doi.org/10.1117/12.2323955
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a1373bdc0eb385d4025b9d841bad64
https://doi.org/10.1117/12.2279334
https://doi.org/10.1117/12.2279334
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6248d052b402bc7b7e1699145371c8a
https://doi.org/10.1117/12.2229274
https://doi.org/10.1117/12.2229274
Autor:
Richard San Martin, Shawn Walsh, K. Scott Wills, F. Scott Johnson, Ken Harvey, Stan Ashburn, Vladimir A. Ukraintsev, Hal Edwards, Philip Menz, Mi-Chang Chang
Publikováno v:
Journal of Applied Physics. 87:1485-1495
The scanning capacitance microscope (SCM) is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SPM). As reported in Edwards et al. [Appl. Phys. Lett. 72, 698 (1998)], scanning capacitance spectroscopy (SCS) is a ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae42eb6d1cbe411c901c16e3e64b406d
https://doi.org/10.1063/1.372039
https://doi.org/10.1063/1.372039
Publikováno v:
Journal of The Electrochemical Society. 146:1158-1162
Characterization of a high selectivity polysilicon chemical mechanical polishing (CMP) is studied in this report. The process is developed for the fabrication of two-dimensional secondary ion mass spectrometry (2D SIMS) test chip, in which a silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::861fd5ae366a1eb6b963ce097b2cb4cd
https://doi.org/10.1149/1.1391738
https://doi.org/10.1149/1.1391738
Publikováno v:
SPIE Proceedings.
Semiconductor technology is advancing below 50 nm critical dimensions bringing unprecedented challenges to process engineering, control and metrology. Traditionally, interconnect metrology is put behind high-priority gate metrology; however, consider
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25bb8040de07b164402a5d2b4160c16e
https://doi.org/10.1117/12.882183
https://doi.org/10.1117/12.882183
Autor:
Vladimir A. Ukraintsev, Bill Banke
Publikováno v:
SPIE Proceedings.
Metrology and control of critical dimensions (CD) are the keys to the nanotechnology success. Modern nanotechnology and nanometrology are largely based on knowledge earned during the last 10-20 years of semiconductor technology development. Semicondu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2da6de8464c9478ca5067e69973832
https://doi.org/10.1117/12.860666
https://doi.org/10.1117/12.860666