Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Vladimir A. Tchekhovski"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 7, Pp 5-12 (2021)
One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a technological route of integrated circuit manufacturing w
Autor:
A.V. Kunts, Nikolay N. Prokopenko, V.E. Chumakov, O. V. Dvornikov, Radioelectronics, Mnipi, Ya.D. Galkin, Vladimir A. Tchekhovski
Publikováno v:
Problems of advanced micro- and nanoelectronic systems development. :37-46
Autor:
Radioelectronics, O.V. Dvornikov, N.N. Prokopenko, A.A. Pavluchik, Mnipi, Vladimir A. Tchekhovski, A.V. Kunts, V.E. Chumakov
Publikováno v:
Problems of advanced micro- and nanoelectronic systems development. :47-54
Autor:
Ippm Ras, Ya.D. Galkin, Mnipi, A.V. Kunts, O. V. Dvornikov, Vladimir A. Tchekhovski, Radioelectronics, Nikolay N. Prokopenko
Publikováno v:
Problems of advanced micro- and nanoelectronic systems development. :46-55
Autor:
Alexei V. Kunz, Oleg Dvornikov, Vladimir A. Tchekhovski, Nikolay N. Prokopenko, Yaroslav D. Galkin
Publikováno v:
Advances in Science, Technology and Engineering Systems Journal. 5:108-114
Autor:
Oleg Dvornikov, Nikolay N. Prokopenko, S. A. Movchan, Valentin L. Dziatlau, Anna V. Bugakova, Vladimir A. Tchekhovski
Publikováno v:
IEEE Transactions on Nuclear Science. 66:2305-2311
New structured array (SA) MH2XA020 and the way of designing nuclear electronic integrated circuits (ICs) based on it are considered. The SA MH2XA020 contains eight readout channels. Each channel includes a charge-sensitive amplifier (CSA), an amplifi
Autor:
A. V. Bugakova, Ya.D. Galkin, O. V. Dvornikov, Vladimir A. Tchekhovski, A.V. Kunts, Nikolay N. Prokopenko
Publikováno v:
Вісник НТУУ «КПІ». Радіотехніка, радіоапаратобудування: збірник наукових праць, Вип. 78
Visnyk NTUU KPI Seriia-Radiotekhnika Radioaparatobuduvannia; 78; 60-66
Вісник НТУУ "КПІ". Серія Радіотехніка, Радіоапаратобудування; 78; 60-66
Вестник НТУУ" КПИ ". Серия радиотехника Радиоаппаратостроение; 78; 60-66
Visnyk NTUU KPI Seriia-Radiotekhnika Radioaparatobuduvannia; 78; 60-66
Вісник НТУУ "КПІ". Серія Радіотехніка, Радіоапаратобудування; 78; 60-66
Вестник НТУУ" КПИ ". Серия радиотехника Радиоаппаратостроение; 78; 60-66
The implementation of a charge-sensitive amplifier (CSA) based on the МН2ХА030 array chip (AC) with an adjustable conversion factor for processing signals of silicone photomultipliers (SPM) is considered. The developed CSA, named ADPreampl3, cont
Publikováno v:
2020 International Symposium on Industrial Electronics and Applications (INDEL).
The circuit simulation results of the charge-sensitive amplifiers (CSA) with various types of input field-effect transistors (FET) are considered. CSA-1 and CSA-2 are implemented on Si bipolar transistors, besides in CSA-1 the input transistor is a S
Autor:
Anna V. Bugakova, Nikolay N. Prokopenko, Oleg Dvornikov, Vladimir A. Tchekhovski, Valentin L. Dziatlau
Publikováno v:
EWDTS
The current-voltage curves (CVCs) of silicon p-JFET and n-JFET, measured in the range of drain currents of about 60 dB, are considered. To describe the CVCs of the JFET in micromode, that is for the drain currents less than 1 μA, it is proposed to u
Autor:
Nikolay N. Prokopenko, Valentin L. Dziatlau, Vladimir A. Tchekhovski, Dmitry G. Drozdov, O. V. Dvornikov, Eugene M. Savchenko
Publikováno v:
2020 Moscow Workshop on Electronic and Networking Technologies (MWENT).
The volt-ampere characteristics (VAC) at temperatures from minus 197 ° C to 30 ° C of n-JFET and p- JFET, manufactured at JSC "SPE "Pulsar" using a complementary bipolar technological route, are considered. Features of the VACs are described and th