Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Vladimir A. Gavva"'
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 112-115 (2016)
Elements the 3 and 5 of groups of the Periodic System and carbon are the most important impurities in silicon. The estimation technique of carbon, boron and phosphorus impurity content in high-purity monosilane has been proposed. The technique involv
Externí odkaz:
https://doaj.org/article/a68921dc03ad4c05b31d8d0d05f3c21e
Autor:
Victor A, Lipskiy, Vitaly O, Nazaryants, Tatiana V, Kotereva, Andrei D, Bulanov, Vladimir A, Gavva, Vasily V, Koltashev, Mikhail F, Churbanov, Victor G, Plotnichenko
Publikováno v:
Applied optics. 58(27)
The results of the precise measurement of the refractive index of stable germanium isotopes Ge72, Ge73, Ge74, and Ge76 single crystals with high enrichment and a germanium single-crystal Genat of natural isotopic composition with the Fourier-transfor
Publikováno v:
Scientific Reports. 7
Scientific Reports 7: Article number: 44813; published online: 20 March 2017; updated: 20 September 2017. The original version of this Article contained typographical errors in the Abstract. “Whispering Gallery Mode (WGM) analysis revealed large Qu
Autor:
Alexandr A. Ezhevskii, Andrey V. Soukhorukov, Davud V. Guseinov, Sergey A. Popkov, Anatoliy V. Gusev, Vladimir A. Gavva, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
Spin‐relaxation and spin diffusion of conduction electrons were studied in silicon enriched by 28Si and 29Si isotopes in order to determine the contribution of hyperfine interaction of conduction electrons with magnetic nuclei of 29Si isotope. The