Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Vladimir A Yuryev"'
Autor:
Irina F Kadikova, Ekaterina A Morozova, Tatyana V Yuryeva, Irina A Grigorieva, Vladimir A Yuryev
Publikováno v:
Materials Research Express, Vol 7, Iss 2, p 025203 (2020)
Nowadays, a problem of historical beadworks conservation in museum collections is actual more than ever because of fatal corrosion of the 19th century glass beads. Study of the beads at different stages of glass corrosion using FTIR was carried out i
Externí odkaz:
https://doaj.org/article/72421fe1fb474a09920ed83494fc6bb6
Autor:
Sergey A. Timofeev, Vladimir N. Yuryev
Publikováno v:
Статистика и экономика, Vol 0, Iss 3, Pp 147-151 (2016)
The article deals with analysis of economic fundamental data and the issue of modeling of change in exchange rate EUR/USD. On the basis of statistical methods from the analysis was developed a model which helps to predict the range of currencies.
Externí odkaz:
https://doaj.org/article/44811a04728f466ebde911ac8ea25bd4
Publikováno v:
Image Journal of Advanced Materials and Technologies. 7:192-200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c14e01d53631c2f5177108764ae0bf3c
https://doi.org/10.17277/jamt.2022.03.pp.192-200
https://doi.org/10.17277/jamt.2022.03.pp.192-200
Autor:
Irina Kadikova, Tatyana Yuryeva, Ekaterina Morozova, Irina Grigorieva, Ilya Afanasyev, Vladimir Karpenko, Vladimir A. Yuryev
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14f1166955993b424eb5b6dae0107e11
https://doi.org/10.2139/ssrn.4350637
https://doi.org/10.2139/ssrn.4350637
Autor:
Tatyana V. Yuryeva, Svetlana A. Pisareva, Ekaterina A. Morozova, Irina F. Kadikova, Vladimir A. Yuryev, Ilya B. Afanasyev, Irina N. Shibanova
Publikováno v:
Journal of Cultural Heritage. 50:126-138
We have detected Egyptian blue pigment in the paint layer of the “Birch. Spring” painting by Robert Falk (1907); we have also found this pigment in the paints of the sketch drawn on the canvas back side. This is probably the first discovery of Eg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90f19f79117d915aba313e3657b48457
https://doi.org/10.1016/j.culher.2021.05.005
https://doi.org/10.1016/j.culher.2021.05.005
Autor:
Larisa V. Arapkina, Kirill V. Chizh, Vladimir P. Dubkov, Mikhail S. Storozhevykh, Vladimir A. Yuryev
Publikováno v:
SSRN Electronic Journal.
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxation was accompanied by changes in the surface structure of the Ge wettin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82a3f175af1acc386270a9719fb838da
https://doi.org/10.2139/ssrn.4169676
https://doi.org/10.2139/ssrn.4169676
Autor:
Mikhail S. Storozhevykh, Larisa V. Arapkina, Sergey M. Novikov, Valentyn S. Volkov, Aleksey V. Arsenin, Oleg V. Uvarov, Vladimir A. Yuryev
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and scanning tunne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::576221f8edc8fb3f98f8d3fea7fc97c1
http://arxiv.org/abs/2104.05412
http://arxiv.org/abs/2104.05412
Autor:
Maria V. Lukashova, Sergey A. Malykhin, Tatyana V. Yuryeva, Irina F. Kadikova, Vladimir A. Yuryev, Irina A. Grigorieva, Ekaterina A. Morozova, Ilya B. Afanasyev, Alexey D. Yapryntsev, Oleg V. Uvarov
Publikováno v:
Journal of Materials Science. 53:10692-10717
Crystalline inclusions of antimony compounds in lead glass of the nineteenth century have been investigated by means of transmission electron microscopy, scanning electron microscopy, X-ray microanalysis, electron backscatter diffraction and microcat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d89d526ff44e61ad0367d75e2321c68
https://doi.org/10.1007/s10853-018-2332-2
https://doi.org/10.1007/s10853-018-2332-2
Autor:
K. V. Chizh, V. P. Dubkov, Vladimir A. Yuryev, D. B. Stavrovskii, Elizabeth P. Lazareva, Larisa V. Arapkina
In this article, the results of investigation of processes occurring during the molecular-beam deposition of germanium layers on Si$_3$N$_4$ dielectric substrates within a wide range of the Ge film growth temperatures (30 to 600{\deg}C) are presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0cee02029cb34f5c8d755d2ade2b8c5