Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Vlad Odnoblyudov"'
Autor:
Marko J. Tadjer, Patrick Waltereit, Lutz Kirste, Stefan Müller, James Spencer Lundh, Alan G. Jacobs, Andrew D. Koehler, Pavel Komarov, Peter Raad, John Gaskins, Patrick Hopkins, Vlad Odnoblyudov, Cem Basceri, Travis J. Anderson, Karl D. Hobart
Publikováno v:
physica status solidi (a).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f5c525c78732982462f262112ccfbd
https://doi.org/10.1002/pssa.202200828
https://doi.org/10.1002/pssa.202200828
Autor:
Vlad Odnoblyudov, Karen Geens, Ozgur Aktas, Dirk Wellekens, Ming Zhao, Weiming Guo, Dirk Fahle, Stefaan Decoutere, Xiangdong Li, Niels Posthuma
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Engineered substrates with a poly-AlN core, thermally matched to the (Al)GaN buffer, are promising to reconcile the use of high-yield GaN wafers with the use of thick buffers (≥ 650 V) on large scale substrates (≥ 200 mm). We successfully managed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c1cb88d80f26ecbe09f8b2b89cbb94
https://doi.org/10.1109/wipda46397.2019.8998922
https://doi.org/10.1109/wipda46397.2019.8998922