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A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of speed desp
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-109266
