Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Vivek Bakshi"'
Publikováno v:
Atoms, Vol 11, Iss 10, p 130 (2023)
We review the results of the 1st Extreme Ultraviolet (EUV) Light Sources Code Comparison Workshop. The goal of this workshop was to provide a platform for specialists in EUV light source plasma modeling to benchmark and validate their numerical codes
Externí odkaz:
https://doaj.org/article/3b65fef61696458d93fa8a6084ccf822
Autor:
Vivek Bakshi
Publikováno v:
SPIE Newsroom.
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS
This guest editorial introduces and summarizes the Special Section on EUV Lithography for the 3-nm Node and Beyond
Autor:
Vivek Bakshi
Extreme ultraviolet lithography (EUVL) is the leading technology being considered for printing circuits at the 32-nm node and below in a high-volume manufacturing (HVM) environment fab. In EUVL, a 13.5-nm-radiation wavelength generated by an EUV sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a35e53ea2f4ac7524d64d6623ec325e
https://doi.org/10.1117/3.613774.ch1
https://doi.org/10.1117/3.613774.ch1
Autor:
Lawrence Iwaki, Roy D. Mcgregor, Armando Martos, Michael B. Petach, Harry Shields, James M. Zamel, Stuart J. McNaught, Richard H. Moyer, Rocco A. Orsini, Samuel Ponti, Mark E. Michaelian, Armando Villarreal, Randall J. St. Pierre, Jeffrey S. Hartlove, Vivek Bakshi, Mark Thomas, Fernando Martos, Steven W. Fornaca
This chapter gives an overview of LPP EUV source development work at Northrop Grumman Corporation (NGC). The chapter covers development of the laser module, xenon target, and overall system. The volume editor (V. Bakshi) prepared this chapter as a su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f510773489e33cd43942d94b2993b24a
https://doi.org/10.1117/3.613774.ch25
https://doi.org/10.1117/3.613774.ch25
Autor:
Simi George, Moza M. Al-Rabban, Vivek Bakshi, Martin Richardson, Chiew-seng Koay, C. Keyser, Kazutoshi Takenoshita
The development of a source bright enough for EUVL, possessing the required long-term stability within a reasonable cost, is forcing plasma physicists to address issues associated with dense plasmas that have up until now received scant attention. Wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17244bc0c8a10335efb1e5edc84555fd
https://doi.org/10.1117/3.613774.ch26
https://doi.org/10.1117/3.613774.ch26
Autor:
I. Konkashbaev, Zinetulla Insepov, Tatiana Burtseva, Bryan J. Rice, Ahmed Hassanein, Vitali Morozov, Jean Paul Allain, V. Tolkach, Valeryi Sizyuk, V. Safronov, Jeffrey N. Brooks, Vivek Bakshi, Tatyana Sizyuk
This chapter presents a summary of plasma-surface interactions in electrode and condenser-optic materials in plasma pinch sources for EUV light generation, with special emphasis on DPPs. In DPP EUV devices, electrodes at the source are exposed to sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4143351593c1c183208b1b833ec21d1d
https://doi.org/10.1117/3.613774.ch35
https://doi.org/10.1117/3.613774.ch35
Autor:
Vivek Bakshi
EUV lithography (EUVL) is the leading technology, beyond 193-nm-based optical lithography, for printing circuits at the 32-nm node and below in a high volume manufacturing (HVM) environment fab. In EUVL, a 13.5-nm radiation wavelength generated by an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f28f8a37caf92b073a4cdd8623259f
https://doi.org/10.1117/3.769214.ch3
https://doi.org/10.1117/3.769214.ch3
Autor:
Ahmed Hassanein, M. Hendricks, Charles S. Tarrio, Vivek Bakshi, Steven E. Grantham, Jean Paul Allain, M. Nieto
Publikováno v:
SPIE Proceedings.
Exposure of collector mirrors facing the hot, dense pinch plasma in plasma-based EUV light sources remains one of the highest critical issues of source component lifetime and commercial feasibility of EUV lithography technology. Studies at Argonne ha
Autor:
Klaus Bergmann, Joseph Pankert, Willi Neff, Bernhard Jagle, Juergen Kleinschmidt, Uwe Stamm, Andre Egbert, Christian Ziener, Vivek Bakshi, Guido Schriever, Rainer Lebert, Christian Wies, Marc Corthout, Deborah Gustafson
Publikováno v:
23rd European Mask and Lithography Conference.
Extreme ultraviolet lithography (EUVL) is the leading technology for patterning at the 32 nm technology node and be-yond. EUVL light at 13.5 nm is used to print circuits. This light is produced by heating fuel (Xe, Sn) in EUV sources to a very high t