Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Vivek, Mootheri"'
Autor:
Zahra Fekri, Phanish Chava, Gregor Hlawacek, Mahdi Ghorbani‐Asl, Silvan Kretschmer, Wajid Awan, Vivek Mootheri, Tommaso Venanzi, Natalia Sycheva, Antony George, Andrey Turchanin, Kenji Watanabe, Takashi Taniguchi, Manfred Helm, Arkady V. Krasheninnikov, Artur Erbe
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract This study explores defect engineering in 2D materials using ion beam irradiation to modify the electrical and optical properties with potential in advancing quantum electronics and photonics. Helium and neon ions ranging from 5 to 7.5 keV a
Externí odkaz:
https://doaj.org/article/e08136aa34fc4c69b664e9743e4bb96d
Autor:
Chenghan Wu, Zheng Wang, Julien Jussot, Steven Brems, Vivek Mootheri, Cedric Huyghebaert, Joris Van Campenhout, Marianna Pantouvaki, Dries Van Thourhout
Publikováno v:
Conference on Lasers and Electro-Optics.
We experimentally demonstrated >10 dB extinction ratio (ER) at 4 Vpp with a 50µm-long double-layer graphene electro-absorption modulator (DLG EAM) integrated on a silicon slot waveguide. Both the modulation depth (0.2dB/µm) and efficiency (0.070 dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::770dbb62a7cbfc33685bb9d62356effc
https://doi.org/10.1364/cleo_si.2022.sf4k.4
https://doi.org/10.1364/cleo_si.2022.sf4k.4
Autor:
Inge Asselberghs, Vivek Mootheri, Albert Minj, Dennis Lin, Alessandra Leonhardt, Goutham Arutchelvan, Marc Heyns, Iuliana Radu
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS 2 , w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0920f610d34eed6b21dc56cf7f4a6439
https://doi.org/10.1109/iitc51362.2021.9537337
https://doi.org/10.1109/iitc51362.2021.9537337
Autor:
D. Lin, Benjamin Groven, Inge Asselberghs, Xiangyu Wu, Daire J. Cott, Iuliana Radu, P. Morin, Vivek Mootheri
Publikováno v:
DRC
Field-effect device concepts with 2-D semiconductors as channels have been proposed as an alternative to Si based CMOS beyond the 3nm node. A MX 2 MOS capacitor differs from its Si counterpart primarily in electrostatics due to its ultra-thin, fully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::121120cef04a2391d6658b226caca012
https://doi.org/10.1109/drc52342.2021.9467203
https://doi.org/10.1109/drc52342.2021.9467203
Autor:
Vivek, Mootheri, Alessandra, Leonhardt, Devin, Verreck, Inge, Asselberghs, Cedric, Huyghebaert, Stefan, Degendt, Iuliana, Radu, Dennis, Lin, Marc M, Heyns
Publikováno v:
Nanotechnology. 32(13)
2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::3f0600a8a2a31ac3e6594dcfbacee2c5
https://pubmed.ncbi.nlm.nih.gov/33410418
https://pubmed.ncbi.nlm.nih.gov/33410418
Autor:
Inge Asselberghs, Iuliana Radu, Alessandra Leonhardt, Michel Houssa, Surajit Sutar, Dennis Lin, Goutham Arutchelvan, Cedric Huyghebaert, Vivek Mootheri, Sreetama Banerjee, Marc Heyns, Marie-Emmanuelle Boulon
Device performance of two dimensional (2D) material based field effect transistors is severely limited by the relatively high contact resistance encountered at the contact-channel interface. Metal-graphene hybrid contacts have been previously used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daafb845d38df9fbde662c7dad4e3fd1
https://lirias.kuleuven.be/handle/123456789/671223
https://lirias.kuleuven.be/handle/123456789/671223
Autor:
Iuliana Radu, Dennis Lin, Inge Asselberghs, Marc Heyns, Vivek Mootheri, Daire J. Cott, Benjamin Groven, Xiangyu Wu
Publikováno v:
Solid-State Electronics. 183:108035
Dual gated 2ML WS2 MOS Capacitors have been fabricated with capacitance values as high as 2.7uF/cm2 (with single sheet charge centroid assumption for the WS2 channel). Frequency and temperature dependent C-V measurements were correlated with simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce814046f2279c7689a16de9d34d8442
https://doi.org/10.1016/j.sse.2021.108035
https://doi.org/10.1016/j.sse.2021.108035
Autor:
Alessandra Leonhardt, Dennis Lin, Inge Asselberghs, Iuliana Radu, Devin Verreck, Marc Heyns, Vivek Mootheri, Stefan De Gendt, Cedric Huyghebaert
Publikováno v:
Nanotechnology. 32:135202
2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS2 field effect transistors (FET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0edba32517554149a6acf73b1475c50
https://doi.org/10.1088/1361-6528/abd27a
https://doi.org/10.1088/1361-6528/abd27a
Autor:
Cedric Huyghebaert, S. De Gendt, Vivek Mootheri, Stefanie Sergeant, C. Lockhart de la Rosa, Alessandra Leonhardt, Thomas Nuytten
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:093016
Material or interface defectivity assessment of 2D materials remains a challenge, specifically in terms of simple techniques which can be integrated in a CMOS process line. Here we demonstrate an optical technique that assesses interface trap densiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4021ab22af98e339a901e6a5514ba3c2
https://doi.org/10.1149/2162-8777/abc3d0
https://doi.org/10.1149/2162-8777/abc3d0
Autor:
Luca Banszerus, Stefan De Gendt, Cedric Huyghebaert, Alessandra Leonhardt, Takashi Taniguchi, Christoph Stampfer, Vivek Mootheri, Thomas Nuytten, Kenji Watanabe, César J. Lockhart de la Rosa, Stefanie Sergeant
Publikováno v:
Advanced Materials Interfaces. 7:2000413
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b095b740f14122ac5b40ea689c2ab191
https://doi.org/10.1002/admi.202000413
https://doi.org/10.1002/admi.202000413