Zobrazeno 1 - 10
of 121
pro vyhledávání: '"Vittorio Camarchia"'
Autor:
Vittorio Camarchia, Paolo Colantonio, Franco Giannini, Rocco Giofre, Tao Jiang, Marco Pirola, Roberto Quaglia, Chiara Ramella
Publikováno v:
IEEE Access, Vol 5, Pp 22244-22251 (2017)
This paper presents the theoretical analysis of phase distortion (AM/PM) mechanisms in Gallium Nitride (GaN) Doherty power amplifiers (DPAs) and a novel approach to optimize the tradeoff between linearity and efficiency. In particular, it is demonstr
Externí odkaz:
https://doaj.org/article/bd5ba6cedd1f4c9e81a13b6b57905a53
Publikováno v:
Micromachines, Vol 5, Iss 3, Pp 711-721 (2014)
This paper presents the progress of monolithic technology for microwaveapplication, focusing on gallium nitride technology advances in the realization of integratedpower amplifiers. Three design examples, developed for microwave backhaul radios, ares
Externí odkaz:
https://doaj.org/article/0451af6637694b05b79d74d8884b988e
Autor:
Anna Piacibello, Rocco Giofre, Roberto Quaglia, Ricardo Figueiredo, Nuno Carvalho, Paolo Colantonio, Vaclav Valenta, Vittorio Camarchia
Publikováno v:
IEEE Microwave and Wireless Components Letters. 32:964-967
Autor:
ANNA PIACIBELLO, Vittorio Camarchia
Publikováno v:
Electronics, Vol 11, Iss 84, p 84 (2022)
Electronics; Volume 11; Issue 1; Pages: 84
Electronics; Volume 11; Issue 1; Pages: 84
This paper discusses some of the design choices underlying the development of watt-level integrated Doherty power amplifiers in the K and Ka band, focusing on compound semiconductor technologies. The key aspect of on-chip power combination is discuss
Publikováno v:
2021 51st European Microwave Conference (EuMC).
Autor:
Abbas Nasri, Motahhareh Estebsari, Siroos Toofan, Anna Piacibello, Marco Pirola, Vittorio Camarchia, Chiara Ramella
Publikováno v:
Electronics; Volume 11; Issue 4; Pages: 552
This paper presents a broadband 3–3.7 GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, the output impedance inverter is eliminated and its effect is embedded in the main device’s output mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d57f744ee1a4d0474bc13c134243f3f
http://hdl.handle.net/11583/2955197
http://hdl.handle.net/11583/2955197
Autor:
Paolo Colantonio, Anna Piacibello, Ferdinando Costanzo, Roberto Quaglia, Marco Pirola, Vittorio Camarchia, Rocco Giofre
This paper presents the design, electromagnetic simulation strategies and experimental characterisation of a two‐stage stacked‐FET cell in a 100 nm GaN on Si technology around 18.8 GHz, suited for Ka band satellite downlink applications. A good a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca25215e8a520a725aac42f9d4a66c19
https://orca.cardiff.ac.uk/id/eprint/142829/1/jnm.2881.pdf
https://orca.cardiff.ac.uk/id/eprint/142829/1/jnm.2881.pdf
Autor:
Roberto Quaglia, Vittorio Camarchia
Publikováno v:
IEEE Microwave Magazine. 23:30-30