Engineering Silicon Carbide for Enhanced Borders and Ports Security

Autor: Vladimir Radulović, Luka Snoj, Robert Bernat, Vitor J.B. Torres, Adam Sarbutt, Zoran Ereš, Tomislav Brodar, Takahiro Makino, Klemen Ambrožič, Ivana Capan, Takeshi Ohshima, Željko Pastuović, Yuichi Yamazaki, José Coutinho

Publikováno v: NATO Science for Peace and Security Series B: Physics and Biophysics ISBN: 9789402420203

Developing new state-of-the-art, low-cost and radiation hard detectors is an extremely difficult challenge which can be tackled only by a multisciplinary group of scientists and engineers from various fields having access to different infrastructure.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4055ea8b9fe4cc961a4bafca9c2ec984
https://doi.org/10.1007/978-94-024-2021-0_8

Multi-phonon (percolation) behavior and local clustering of CdxZn1−xSe-cubic mixed crystals (x ≤ 0.3): A Raman–ab initio study

Autor: Alain Maillard, Jean-Paul Itié, Mala N. Rao, Olivier Pagès, Andrei Postnikov, Alain Polian, Franciszek Firszt, A. En Naciri, Vitor J.B. Torres, H. Dicko, M. B. Shoker, Rekha Rao, Laurent Broch, Karol Strzałkowski

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2019, 126 (10), pp.105707. ⟨10.1063/1.5111106⟩
Journal of Applied Physics, 2019, 126 (10), pp.105707. ⟨10.1063/1.5111106⟩

International audience; We present a polarization-dependent pure transverse-optic (TO) Raman study of high-quality Cd x Zn 1−x Se single crystals with zincblende (cubic) structures (x 0:3) covering both the phonon and phonon-polariton variants of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d65822c3b5729e2157419fb55eac768
https://hal.univ-lorraine.fr/hal-02900963

Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon

Autor: Bruce Hamilton, Vitor J.B. Torres, Vladimir P. Markevich, José Coutinho, L. Dobaczewski, Anthony R. Peaker, S. B. Lastovskii, B. G. Svensson, L.I. Murin

Publikováno v: physica status solidi (a). 208:568-571

We have recently found that the silicon trivacancy (V3) is a bistable defect that can occur in fourfold coordinated and (110) planar configurations for both the neutral and singly negative charge states [V. P. Markevich et al., Phys. Rev. B 80, 23520

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3993105708fb163ee87c176b248ea6f8
https://doi.org/10.1002/pssa.201000265

Electronic structural details of donor–vacancy complexes in Si-doped Ge and Ge-doped Si

Autor: Vitor J.B. Torres, João A. P. Coutinho, Patrick R. Briddon, M. Barroso, Alexandra Carvalho, F. Castro

Publikováno v: Thin Solid Films. 518:2381-2385

We present a detailed picture of the electronic structure of donor-vacancy complexes in Ge-doped silicon and Si-doped germanium Clusters to mimic Si-rich and Ge-rich SiGe alloys, respectively Jahn-Teller effects and electrical levels were investigate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ea119e9e61e831c806a1e9cfee125c7
https://doi.org/10.1016/j.tsf.2009.09.168

Identification of stable and metastable forms of centers in germanium

Autor: Vladimir P. Markevich, Patrick R. Briddon, João A. P. Coutinho, Anthony R. Peaker, R. Jones, V. V. Litvinov, Alexandra Carvalho, Vitor J.B. Torres

Publikováno v: Physica B: Condensed Matter. :192-195

Deep level transient spectroscopy (DLTS) together with first-principles calculations are used to investigate the centers that are formed upon annealing of the dominant VO center in Ge. It is suggested that as opposed to Si, the VO 2 complex in Ge is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::86c7b0f0d1e95de295aae4980ddb60ac
https://doi.org/10.1016/j.physb.2007.08.144