Zobrazeno 1 - 10
of 328
pro vyhledávání: '"Vito Raineri"'
Autor:
I L FragaHt, Roberta G. Toro, Graziella Malandrino, Corrado Bongiorno, R LoNigro, Vito Raineri
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003
Microscopy of Semiconducting Materials 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188e994bb20514d8605208e6b9a6fe2a
https://doi.org/10.1201/9781351074636-94
https://doi.org/10.1201/9781351074636-94
Autor:
R. Lo Nigro, Patrick Fiorenza, Michał Leszczyński, Vito Raineri, Alessia Frazzetto, Mario Saggio, Filippo Giannazzo, Giuseppe Greco, P. Pristawko, Fabrizio Roccaforte
Publikováno v:
Applied surface science 258 (2012): 8324–8333. doi:10.1016/j.apsusc.2012.03.165
info:cnr-pdr/source/autori:Roccaforte F, Frazzetto A, Greco G, Giannazzo F, Fiorenza P, Lo Nigro R, Saggio M, Leszczynski M, Pristawko P, Raineri V/titolo:Critical issues for interfaces to p-type SiC and GaN in power devices/doi:10.1016%2Fj.apsusc.2012.03.165/rivista:Applied surface science/anno:2012/pagina_da:8324/pagina_a:8333/intervallo_pagine:8324–8333/volume:258
info:cnr-pdr/source/autori:Roccaforte F, Frazzetto A, Greco G, Giannazzo F, Fiorenza P, Lo Nigro R, Saggio M, Leszczynski M, Pristawko P, Raineri V/titolo:Critical issues for interfaces to p-type SiC and GaN in power devices/doi:10.1016%2Fj.apsusc.2012.03.165/rivista:Applied surface science/anno:2012/pagina_da:8324/pagina_a:8333/intervallo_pagine:8324–8333/volume:258
Silicon carbide (SiC) and gallium nitride (GaN) are excellent wide band gap materials for power electronics. In spite of the significant progresses achieved in the last years, there are several issues limiting the performances of the developed device
Autor:
Giuseppe Abbondanza, A. Pecora, Corrado Bongiorno, Patrick Fiorenza, Francesco La Via, Andrea Severino, Vito Raineri, Danilo Crippa, Andrea Canino, Massimo Camarda, Marco Mauceri, Antonino La Magna
Publikováno v:
Materials Science Forum. :149-152
In this paper we study the surface morphology of 4° degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of
Autor:
R. Lo Nigro, Alessia Frazzetto, Vito Raineri, Edoardo Zanetti, Filippo Giannazzo, Mario Saggio, Fabrizio Roccaforte
Publikováno v:
Materials science forum 717-720 (2012): 825–828. doi:10.4028/www.scientific.net/MSF.717-720.825
info:cnr-pdr/source/autori:Frazzetto A, Roccaforte F, Giannazzo F, Lo Nigro R, Saggio M, Zanetti E, Raineri V/titolo:Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC/doi:10.4028%2Fwww.scientific.net%2FMSF.717-720.825/rivista:Materials science forum/anno:2012/pagina_da:825/pagina_a:828/intervallo_pagine:825–828/volume:717-720
info:cnr-pdr/source/autori:Frazzetto A, Roccaforte F, Giannazzo F, Lo Nigro R, Saggio M, Zanetti E, Raineri V/titolo:Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC/doi:10.4028%2Fwww.scientific.net%2FMSF.717-720.825/rivista:Materials science forum/anno:2012/pagina_da:825/pagina_a:828/intervallo_pagine:825–828/volume:717-720
This paper reports on the effects of different post-implantation annealings on the electrical properties of interfaces to p-type implanted 4H-SiC. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation
Autor:
Vito Raineri, Carmelo Vecchio, Emanuele Rimini, Sushant Sonde, Filippo Giannazzo, Rositsa Yakimova
Publikováno v:
Physica. E, Low-dimensional systems and nanostructures
44 (2012): 93–96. doi:10.1016/j.physe.2011.01.002
info:cnr-pdr/source/autori:Sonde S, Vecchio C, Giannazzo F, Yakimova R, Raineri V, Rimini E/titolo:Effect of graphene%2F4H-SiC(0001) interface on electrostatic properties in graphene/doi:10.1016%2Fj.physe.2011.01.002/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2012/pagina_da:93/pagina_a:96/intervallo_pagine:93–96/volume:44
44 (2012): 93–96. doi:10.1016/j.physe.2011.01.002
info:cnr-pdr/source/autori:Sonde S, Vecchio C, Giannazzo F, Yakimova R, Raineri V, Rimini E/titolo:Effect of graphene%2F4H-SiC(0001) interface on electrostatic properties in graphene/doi:10.1016%2Fj.physe.2011.01.002/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2012/pagina_da:93/pagina_a:96/intervallo_pagine:93–96/volume:44
Electrostatic properties, quantum capacitance (C-q) and local density of states (LDOS) are evaluated for graphene on 4H-SiC(0 0 0 1) by measuring the local capacitance with Scanning Capacitance Spectroscopy (SCS). Two distinct samples were used for c
Autor:
Salvatore Di Franco, Filippo Giannazzo, Wielfried Lerch, Martin Rambach, Emanuele Rimini, Corrado Bongiorno, Vito Raineri
Publikováno v:
Materials Science Forum. 711:141-148
We present a nanoscale morphological and structural characterization of few layers of graphene grown by thermal decomposition of off-axis 4H-SiC (0001). A comparison between transmission electron microscopy (TEM) in cross-section and in plan view all
Autor:
Emanuele Rimini, Corrado Bongiorno, Filippo Giannazzo, Vito Raineri, Raffaella Lo Nigro, Salvatore Di Franco
Publikováno v:
Diffusion and defect data, solid state data. Part B, Solid state phenomena 178-179 (2011): 125–129. doi:10.4028/www.scientific.net/SSP.178-179.125
info:cnr-pdr/source/autori:V. Raineri. C. Bongiorno, S. Di Franco, R. Lo Nigro, E. Rimini, F. Giannazzo/titolo:Surface corrugation and stacking misorientation in multilayers of graphene on Nickel/doi:10.4028%2Fwww.scientific.net%2FSSP.178-179.125/rivista:Diffusion and defect data, solid state data. Part B, Solid state phenomena/anno:2011/pagina_da:125/pagina_a:129/intervallo_pagine:125–129/volume:178-179
info:cnr-pdr/source/autori:V. Raineri. C. Bongiorno, S. Di Franco, R. Lo Nigro, E. Rimini, F. Giannazzo/titolo:Surface corrugation and stacking misorientation in multilayers of graphene on Nickel/doi:10.4028%2Fwww.scientific.net%2FSSP.178-179.125/rivista:Diffusion and defect data, solid state data. Part B, Solid state phenomena/anno:2011/pagina_da:125/pagina_a:129/intervallo_pagine:125–129/volume:178-179
Graphene films were grown on thin polycrystalline Ni using a buried amorphous carbon (a-C) layer as C source. Rapid thermal processes (RTP) at temperatures from 600 to 800 degrees C were used to promote C diffusion into Ni and its subsequent segregat
Autor:
Filippo Giannazzo, Edoardo Zanetti, Mario Saggio, Raffaella Lo Nigro, Ming Hung Weng, Corrado Bongiorno, Alessia Frazzetto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri
Publikováno v:
Materials science forum 679-680 (2011): 413–416. doi:10.4028/www.scientific.net/MSF.679-680.413
info:cnr-pdr/source/autori:A. Frazzetto, F. Roccaforte, F. Giannazzo, R. Lo Nigro, C. Bongiorno, S. Di Franco,M. H. Weng, M. Saggio, E. Zanetti, V. Raineri/titolo:Impact of surface morphology on the electrical properties of Al%2FTi Ohmic contacts on Al-implanted 4H-SiC/doi:10.4028%2Fwww.scientific.net%2FMSF.679-680.413/rivista:Materials science forum/anno:2011/pagina_da:413/pagina_a:416/intervallo_pagine:413–416/volume:679-680
info:cnr-pdr/source/autori:A. Frazzetto, F. Roccaforte, F. Giannazzo, R. Lo Nigro, C. Bongiorno, S. Di Franco,M. H. Weng, M. Saggio, E. Zanetti, V. Raineri/titolo:Impact of surface morphology on the electrical properties of Al%2FTi Ohmic contacts on Al-implanted 4H-SiC/doi:10.4028%2Fwww.scientific.net%2FMSF.679-680.413/rivista:Materials science forum/anno:2011/pagina_da:413/pagina_a:416/intervallo_pagine:413–416/volume:679-680
This paper reports on the impact of the surface morphology on the properties of Ti/Al Ohmic contacts fabricated on Al-implanted 4H-SiC. In particular, the surface roughness of the Al-implanted regions after annealing at 1700 °C was strongly reduced
Autor:
Francesco La Via, Corrado Bongiorno, Patrick Fiorenza, Danilo Crippa, Silvia Scalese, Andrea Severino, Massimo Camarda, Marco Mauceri, Antonino La Magna, Vito Raineri
Publikováno v:
Materials Science Forum 679-680 (2011): 358–361. doi:10.4028/www.scientific.net/MSF.679-680.358
info:cnr-pdr/source/autori:Massimo Camarda, Andrea Severino, Patrick Fiorenza, Vito Raineri, S. Scalese, Corrado Bongiorno, Antonino La Magna, Francesco La Via, Marco Mauceri, Danilo Crippa/titolo:On the "Step Bunching" Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide/doi:10.4028%2Fwww.scientific.net%2FMSF.679-680.358/rivista:Materials Science Forum/anno:2011/pagina_da:358/pagina_a:361/intervallo_pagine:358–361/volume:679-680
info:cnr-pdr/source/autori:Massimo Camarda, Andrea Severino, Patrick Fiorenza, Vito Raineri, S. Scalese, Corrado Bongiorno, Antonino La Magna, Francesco La Via, Marco Mauceri, Danilo Crippa/titolo:On the "Step Bunching" Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide/doi:10.4028%2Fwww.scientific.net%2FMSF.679-680.358/rivista:Materials Science Forum/anno:2011/pagina_da:358/pagina_a:361/intervallo_pagine:358–361/volume:679-680
Using several types of surface analysis (Optical profilometers (OP), Atomic Force Microscopies (AFM), Scanning Electron Microscopies (SEM) and cross-sectional high-resolution Transmission Electron Microscopies (TEM)) we analyze the surface morphologi
Autor:
R Mallik, R. A. Puglisi, Antonella Sciuto, G Di Marco, M Kumar, R Previti, Vito Raineri, P Shukla, Massimo Mazzillo
Publikováno v:
IEEE sensors journal 11 (2011): 377–381. doi:10.1109/JSEN.2010.2073462
info:cnr-pdr/source/autori:Mazzillo M; Shukla P; Mallik R; Kumar M; Previti R; Di Marco G; Sciuto A; Puglisi RA; Raineri V/titolo:4H-SiC Schottky Photodiode Based Demonstrator Board for UV-Index Monitoring/doi:10.1109%2FJSEN.2010.2073462/rivista:IEEE sensors journal/anno:2011/pagina_da:377/pagina_a:381/intervallo_pagine:377–381/volume:11
info:cnr-pdr/source/autori:Mazzillo M; Shukla P; Mallik R; Kumar M; Previti R; Di Marco G; Sciuto A; Puglisi RA; Raineri V/titolo:4H-SiC Schottky Photodiode Based Demonstrator Board for UV-Index Monitoring/doi:10.1109%2FJSEN.2010.2073462/rivista:IEEE sensors journal/anno:2011/pagina_da:377/pagina_a:381/intervallo_pagine:377–381/volume:11
There is significant scientific evidence demonstrating that excessive exposure to ultraviolet (UV) radiation in sunlight and from artificial sources may cause acute and chronic adverse health effects to skin and eye. The Global Solar UV Index (UVI) d