Zobrazeno 1 - 10
of 1 119
pro vyhledávání: '"Vitiello M"'
Autor:
Falanga A, Siciliano A, Vitiello M, Franci G, Del Genio V, Galdiero S, Guida M, Carraturo F, Fahmi A, Galdiero E
Publikováno v:
International Journal of Nanomedicine, Vol Volume 15, Pp 8097-8108 (2020)
Annarita Falanga,1 Antonietta Siciliano,2 Mariateresa Vitiello,3 Gianluigi Franci,4 Valentina Del Genio,5 Stefania Galdiero,5 Marco Guida,2 Federica Carraturo,2 Amir Fahmi,6,* Emilia Galdiero2,* 1Department of Agricultural Science, University of Napl
Externí odkaz:
https://doaj.org/article/cf93aa604199418384e899d298e7c27b
Autor:
Accardo A, Vitiello M, Tesauro D, Galdiero M, Finamore E, Martora F, Mansi R, Ringhieri P, Morelli G
Publikováno v:
International Journal of Nanomedicine, Vol 2014, Iss Issue 1, Pp 2137-2148 (2014)
Antonella Accardo,1 Mariateresa Vitiello,2,3 Diego Tesauro,1 Marilena Galdiero,2 Emiliana Finamore,2 Francesca Martora,2 Rosalba Mansi,1 Paola Ringhieri,1 Giancarlo Morelli11Department of Pharmacy, Interuniversitary Centre for Research on Bioactive p
Externí odkaz:
https://doaj.org/article/2d570d49fb014df9ba83f84f8e2633b3
Publikováno v:
International Journal of Nanomedicine, Vol 2013, Iss default, Pp 521-534 (2013)
Rossella Tarallo,1 Tom P Carberry,2 Annarita Falanga,1 Mariateresa Vitiello,3 Stefania Galdiero,1 Massimiliano Galdiero,3 Marcus Weck21Dipartimento di Farmacia, Università di Napoli "Federico II," and DFM Scarl, Napoli, Italia; 2Molecular Design Ins
Externí odkaz:
https://doaj.org/article/56a726a661784ecf8b04be883ec88c0a
Publikováno v:
International Journal of Nanomedicine, Vol 2012, Iss default, Pp 2361-2371 (2012)
Marco Cantisani,1 Mariateresa Vitiello,2 Annarita Falanga,1 Emiliana Finamore,2 Marilena Galdiero,2 Stefania Galdiero11Department of Biological Sciences, CIRPeB and IBB CNR, University of Naples "Federico II," Napoli, Italy; 2Department of Experiment
Externí odkaz:
https://doaj.org/article/84a32f692817457f8702c78e112449da
Autor:
Asgari, M., Viti, L., Balci, O., Shinde, S. M., Zhang, J., Ramezani, H., Sharma, S., Meersha, A., Menichetti, G., McAleese, C., Conran, B., Wang, X., Tomadin, A., Ferrari, A. C., Vitiello, M. S.
The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to
Externí odkaz:
http://arxiv.org/abs/2206.13800
Autor:
Mezzapesa, F. P., Garrasi, K., Schmidt, J., Salemi, L., Pistore, V., Li, L., Davies, A. G., Linfield, E. H., Riesch, M., Jirauschek, C., Carey, T., Torrisi, F., Ferrari, A. C., Vitiello, M. S.
The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical f
Externí odkaz:
http://arxiv.org/abs/2011.11491
Autor:
Bianco, F., Perenzoni, D., Convertino, D., De Bonis, S. L., Spirito, D., Vitiello, M. S., Coletti, C., Perenzoni, M., Tredicucci, A.
Publikováno v:
Appl. Phys. Lett. 107, 131104 (2015)
We report on room temperature THz detection by means of antenna-coupled field effect transistors fabricated by using epitaxial graphene grown on silicon carbide substrate. Two independent detection mechanisms are found: plasma wave assisted-detection
Externí odkaz:
http://arxiv.org/abs/1805.00733
Publikováno v:
FlatChem 1 (2017) 60-64
Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials "beyond graphene" and novel topological phases of matter. While surface oxidation in ambient condi
Externí odkaz:
http://arxiv.org/abs/1805.00729
Autor:
Kadykov, A., Teppe, F., Consejo, C., Viti, L., Vitiello, M., Coquillat, D., Ruffenach, S., Morozov, S., Kristopenko, S., Marcinkiewicz, M., Dyakonova, N., Knap, W., Gavrilenko, V., Michailov, N. N., Dvoretskii, S. A.
Publikováno v:
APPLIED PHYSICS LETTERS 107, 152101 (2015)
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transitio
Externí odkaz:
http://arxiv.org/abs/1804.11263
Autor:
Mazzetta, I., Viti, L., Rigoni, F., Quaranta, S., Gasparotto, A., Barucca, G., Palma, F., Riello, P., Cattaruzza, E., Asgari, M., Vitiello, M., Irrera, F.
Publikováno v:
In Materials & Design May 2022 217