Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Vitaly Z. Zubialevich"'
Autor:
Muhammet Genc, Vitaly Z. Zubialevich, Abhinandan Hazarika, Peter J. Parbrook, Brian Corbett, Zhi Li
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 12, Pp n/a-n/a (2023)
The success of silicon photonics is sparking widespread interest in photonic integrated circuits at visible light wavelengths using SiN and other waveguiding platforms. Compact active circuits desire the heterogeneous integration of GaN‐based laser
Externí odkaz:
https://doaj.org/article/b24d2d30759c4297a1e877160592c50a
Autor:
Peter Milner, Vitaly Z. Zubialevich, Thomas O'Connor, Sandeep M. Singh, Davinder Singh, Brian Corbett, Peter J. Parbrook
Publikováno v:
Electronics Letters, Vol 59, Iss 19, Pp n/a-n/a (2023)
Abstract In this work, the authors report the first demonstration of an ultraviolet light‐emitting diode (LED) with boron‐containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first Q
Externí odkaz:
https://doaj.org/article/a4650c7ae5654e4abb4e8b01c1e9e025
Autor:
Aleksandra Przewłoka, Zbigniew R. Zytkiewicz, M. Rogala, Aleksandra Krajewska, J. Binder, Pawel J. Kowalczyk, Vitaly Z. Zubialevich, P. Dąbrowski, Andrzej Wysmołek, Pawel Krukowski, Aneta Drabińska, M. Sobanska, Jakub Kierdaszuk, Wawrzyniec Kaszub
Publikováno v:
Carbon. 186:128-140
Gallium nitride nanowire and nanorod substrates are prospective platforms allowing to control the local strain distribution in graphene films on top of them, resulting in an induction of pseudomagnetic fields. AFM measurements performed in a HybriD m
Autor:
Zeinab Shaban, Vitaly Z Zubialevich, Emmanouil A Amargianitakis, Fatih Bilge Atar, Peter James Parbrook, Zhi Li, Brian Corbett
Publikováno v:
Semiconductor Science and Technology. 38:055015
We introduce a novel superlattice structure for releasing GaN-based devices with selective photo-electrochemical (PEC) etching by incorporating a lattice-matched AlInN barrier in an InGaN/GaN sacrificial stack. A dopant-free two-dimensional hole gas
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga, Al)N-based photonic and electronic devices. The bandgaps and bandgap bowing parameters of III-nitrides across the full composition range are reviewed wit
Autor:
Vitaly Z. Zubialevich, Darragh Buckley, Colm O'Dwyer, Peter J. Parbrook, Farzan Gity, David McNulty, Saikumar Inguva, Paul K. Hurley
Publikováno v:
ECS Transactions. 98:151-158
Zinc oxide (ZnO) and Al-doped ZnO are important optoelectronic materials. ZnO in particular has a wide band gap (Eg ~ 3.3 eV at 300 K), large exciton binding energy (~66 meV) and especially for the variety of methods by which it can be processed. Mor
Publikováno v:
Crystal Growth & Design. 20:3686-3700
Thermal annealing of top−down fabricated GaN nanocolumns (NCs) was investigated over a wide range of temperatures for ammonia-rich atmospheres of both nitrogen and hydrogen. It was found that in contrast to the annealing of planar GaN layers, where
Autor:
Lucia Spasevski, Peter J. Parbrook, Pietro Pampili, Gunnar Kusch, Robert W. Martin, Vitaly Z. Zubialevich, Duc V. Dinh, Jochen Bruckbauer, Paul R. Edwards
With a view to supporting the development of ultra-violet light-emitting diodes and related devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga1-x N alloys are extensively compared. This study has been designed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cf484eadb12701d087377321f9e8b4e
https://www.repository.cam.ac.uk/handle/1810/311875
https://www.repository.cam.ac.uk/handle/1810/311875
Publikováno v:
Scientific reportsReferences. 10(1)
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga, Al)N-based photonic and electronic devices. The bandgaps and bandgap bowing parameters of III-nitrides across the full composition range are reviewed wit
Autor:
John Shen, Mathew McLaren, Pietro Pampili, Peter J. Parbrook, Miryam Arredondo-Arechavala, Vitaly Z. Zubialevich
Publikováno v:
Zubialevich, V, McLaren, M, Pampili, P, Shen, J, Arredondo-Arechavala, M & Parbrook, P J 2020, ' Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD ', Journal of Applied Physics, vol. 127, no. 2, 025306 . https://doi.org/10.1063/1.5110602
Reduction of threading dislocation density in top-down fabricated GaN nanocolumns (NCs) via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by metalorganic chemical vapor deposition is studied by transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::404193e428ed2f4a2e97188a25c3a4ad
https://pure.qub.ac.uk/en/publications/reduction-of-threading-dislocation-density-in-topdown-fabricated-gan-nanocolumns-via-their-lateral-overgrowth-by-mocvd(d6ba5a99-e35c-40b8-977b-33c5c827d5e9).html
https://pure.qub.ac.uk/en/publications/reduction-of-threading-dislocation-density-in-topdown-fabricated-gan-nanocolumns-via-their-lateral-overgrowth-by-mocvd(d6ba5a99-e35c-40b8-977b-33c5c827d5e9).html