Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Vitaly A. Solodukha"'
Autor:
N. S. Kovalchuk, Yu. A. Marudo, A. A. Omelchenko, Vladimir A. Pilipenko, Vitaly A. Solodukha, S. A. Demidovich, V. V. Kolos, E. S. Kozlova, V. A. Filipenya, D. V. Shestovski
Publikováno v:
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 26:59-68
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31ad4ae44caaabd75f950707991bdc9f
https://doi.org/10.1615/hightempmatproc.2022043900
https://doi.org/10.1615/hightempmatproc.2022043900
Publikováno v:
Yugra State University Bulletin. 15:44-61
The possibility of creating silicon bipolar high-power microwave transistors by the method of ion doping of monosilicon with B + ions through a layer of SiO2 and emitter windows in it with the subsequent introduction of P + ions into them and anneali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdef952c4be032ac4dd6ec692cc2334a
https://doi.org/10.17816/byusu20190244-61
https://doi.org/10.17816/byusu20190244-61
Autor:
Vitaly A. Solodukha, F. F. Komarov, O. V. Milchanin, Vladimir A. Pilipenko, Valentina A. Gorushko
Publikováno v:
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 23:195-208
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fccfc2adf48b780ea217f7b5114b123
https://doi.org/10.1615/hightempmatproc.v23.i3.10
https://doi.org/10.1615/hightempmatproc.v23.i3.10
Autor:
Valentina A. Gorushko, Vitaly A. Solodukha, F. F. Komarov, Vladimir A. Pilipenko, O. V. Milchanin, A. N. Kupchishin
Publikováno v:
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 23:255-273
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d28489a20e35bd3352c5a2465765bf01
https://doi.org/10.1615/hightempmatproc.2019031214
https://doi.org/10.1615/hightempmatproc.2019031214
Autor:
Vladimir A. Pilipenko, A. K. Tyavlovsky, Vitaly A. Solodukha, O. K. Gusev, Kanstantsin Pantsialeyeu, R. I. Vorobey, K. L. Tyavlovsky, Vitalii A. Bondariev, Anatoly Zharin
Publikováno v:
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 23:283-290
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93be659eba89c9f3103a3c2592efc01c
https://doi.org/10.1615/hightempmatproc.2019031122
https://doi.org/10.1615/hightempmatproc.2019031122
Publikováno v:
Yugra State University Bulletin. 14:23-37
The paper considers the formation of a transition layer of Mo - Si contacts, as well as the effect of Mo film deposition regimes and methods of heat treatment of contacts. It was found that when forming contacts of microwave transistors, by depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3479a42fa61984afe186d2c8835b3ee
https://doi.org/10.17816/byusu20180423-37
https://doi.org/10.17816/byusu20180423-37
Publikováno v:
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 22:1-6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d52494a942b0a8f6bb1136831962169
https://doi.org/10.1615/hightempmatproc.2018026506
https://doi.org/10.1615/hightempmatproc.2018026506