Zobrazeno 1 - 10
of 144
pro vyhledávání: '"Vitaliy Avrutin"'
Autor:
Emilis Šermukšnis, Artūr Šimukovič, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç
Publikováno v:
Crystals, Vol 14, Iss 1, p 75 (2024)
Pulsed hot-electron microwave noise measurements of the (Be)MgZnO/ZnO heterostructures are presented in this work. The heterostructures of different barrier thicknesses and different bulk electron densities in ZnO layer are compared. Capacitance–vo
Externí odkaz:
https://doaj.org/article/232990cc55594e308b20749abfbfb673
Publikováno v:
IEEE Open Journal of Antennas and Propagation, Vol 3, Pp 538-548 (2022)
In this article, we report the first ever antenna array with >90% transparency that is intended for 5G networks for smart cities. This level of transparency is achieved by using Gallium-doped Zinc Oxides. The array designed and tested is for sub-6GHz
Externí odkaz:
https://doaj.org/article/572e78cd27d346b6bc2a0704e14b8129
Autor:
Samiul Hasan, Mohi Uddin Jewel, Scott R. Crittenden, Dongkyu Lee, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç, Iftikhar Ahmad
Publikováno v:
Crystals, Vol 13, Iss 2, p 231 (2023)
We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor deposition (MOCVD). In this study, three different thicknesses of
Externí odkaz:
https://doaj.org/article/f8f0d75f6741413186c84c18eb6e2ba4
Autor:
Kai Ding, Dhruv Fomra, Alexander V. Kvit, Hadis Morkoç, Nathaniel Kinsey, Ümit Özgür, Vitaliy Avrutin
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 7, Pp n/a-n/a (2021)
Titanium nitride (TiN) is highly attractive for plasmonics and nanophotonics applications owing to its gold‐like but tunable optical properties. Its prodigious potential for plasmonics has been demonstrated on sapphire or bulk MgO. For a transforma
Externí odkaz:
https://doaj.org/article/66dbe2191e2345b3bb049eb80b814ea5
Autor:
Jonathan Lundquist, Benjamin Horstmann, Dmitry Pestov, Umit Ozgur, Vitaliy Avrutin, Erdem Topsakal
Publikováno v:
Biosensors, Vol 12, Iss 5, p 358 (2022)
Wearable biosensors for continuous health monitoring, particularly those used for glucose detection, have a limited operational lifetime due to biodegradation and fouling. As a result, patients must change sensors frequently, increasing cost and pati
Externí odkaz:
https://doaj.org/article/a2c6e76006304bf9bf847d048d4e4980
Publikováno v:
Applied Sciences, Vol 9, Iss 6, p 1206 (2019)
Compared with conventional display technologies, liquid crystal display (LCD), and organic light emitting diode (OLED), micro-LED displays possess potential advantages such as high contrast, fast response, and relatively wide color gamut, low power c
Externí odkaz:
https://doaj.org/article/c468aebfce90402d8c70837e67853599
Publikováno v:
Crystals, Vol 7, Iss 10, p 300 (2017)
We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction A
Externí odkaz:
https://doaj.org/article/fb4ecb25ff004612847c7df22f06a603
Autor:
Mohi Uddin Jewel, Samiul Hasan, Scott R. Crittenden, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç, Iftikhar Ahmad
Publikováno v:
physica status solidi (a).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6981c0b11692486dd2987272525af77d
https://doi.org/10.1002/pssa.202300036
https://doi.org/10.1002/pssa.202300036
Autor:
Md Fazle Rabbe, Volodymyr Sheremet, Samiran Ganguly, Ashok K. Sood, John W. Zeller, Latika S. Chaudhary, Vitaliy Avrutin, Ümit Özgür, Nibir K. Dhar
Publikováno v:
SoutheastCon 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87112b5909b837447a99bdaced0295ee
https://doi.org/10.1109/southeastcon51012.2023.10115198
https://doi.org/10.1109/southeastcon51012.2023.10115198
Autor:
Samiul Hasan, Mohi Uddin Jewel, Scott R Crittenden, Dongkyu Lee, Vitaliy Avrutin, Umit Ozgur, Hadis Morkoc, Iftikhar Ahmad
We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal-organic chemical vapor deposition (MOCVD). In this study, three different thicknesses of Ga2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20f072bb03043b1da8d19e08e89d585e
