Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Vitalij Kovalevskij"'
Autor:
Emilis Šermukšnis, Justinas Jorudas, Artūr Šimukovič, Vitalij Kovalevskij, Irmantas Kašalynas
Publikováno v:
Applied Sciences, Vol 12, Iss 21, p 11079 (2022)
In this work, we investigated the self-heating effects of annealed Ti/Al/Ni/Au ohmic contacts and two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures under strong electric field by using the short pulse current–voltage and microwave n
Externí odkaz:
https://doaj.org/article/7a6682bd17244447b2d92e6e55699c7c
Autor:
Antanas Nacys, Dijana Šimkūnaitė, Aldona Balčiūnaitė, Aušrinė Zabielaitė, Daina Upskuvienė, Benjaminas Šebeka, Vitalija Jasulaitienė, Vitalij Kovalevskij, Eugenijus Norkus, Loreta Tamašauskaitė-Tamašiūnaitė
Publikováno v:
Crystals, Vol 12, Iss 3, p 362 (2022)
In this study, a platinum-coated Ni foam catalyst (denoted PtNi/Ni foam) was investigated for the oxidation of the formate reaction (FOR) in an alkaline medium. The catalyst was fabricated via a two-step procedure, which involved an electroless depos
Externí odkaz:
https://doaj.org/article/bc07553047594c57b6a4c341c67f7fba
Autor:
Justinas Jorudas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Paweł Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, Irmantas Kašalynas
Publikováno v:
Micromachines, Vol 11, Iss 12, p 1131 (2020)
We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to i
Externí odkaz:
https://doaj.org/article/6ec2e3a2a5904a008f738fa7924af970
Autor:
Tomas Ceponis, Kazimieras Badokas, Laimonas Deveikis, Jevgenij Pavlov, Vytautas Rumbauskas, Vitalij Kovalevskij, Sandra Stanionyte, Gintautas Tamulaitis, Eugenijus Gaubas
Publikováno v:
Sensors, Vol 19, Iss 15, p 3388 (2019)
Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices
Externí odkaz:
https://doaj.org/article/2b514584a337493db58324fc5201830c
Autor:
Maciej Sakowicz, Maksym Dub, Pavlo Sai, Dmitro B. But, Grzegorz Cywinski, Justinas Jorudas, Artur Šimukovic, Pawel Prystawko, Simonas Indrišiunas, Vitalij Kovalevskij, Sergey Rumyantsev, Irmantas Kašalynas, Wojciech Knap
Publikováno v:
Terahertz Emitters, Receivers, and Applications XIII.
Autor:
Vitalij Kovalevskij, Žydrūnas Podlipskas, Gintautas Tamulaitis, Ramūnas Aleksiejūnas, Marek Kolenda, D. Dobrovolskas, Arūnas Kadys, J. Jurkevičius
Publikováno v:
Journal of Alloys and Compounds. 789:48-55
Carrier dynamics were studied in InN, which is a promising material for radiation-resistant optoelectronic devices. InN epilayers with different background electron densities were prepared by metal-organic chemical vapor deposition and irradiated wit
Autor:
Danielius Lingis, Artūras Plukis, Vitalij Kovalevskij, Ieva Matulaitienė, Elena Lagzdina, R. Plukienė, Gediminas Niaura, Mindaugas Gaspariūnas, Vidmantas Remeikis
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 444:23-32
Graphite is a major core component in the graphite-moderated RBMK-1500 nuclear reactor. Neutron irradiation induces radiation damage in the graphite matrix, which affects physical properties of material. In order to generate defects that could be sim
Autor:
Inga Garbarienė, Julija Pauraitė, Daria Pashneva, Agnė Minderytė, Karolis Sarka, Vadimas Dudoitis, Lina Davulienė, Mindaugas Gaspariūnas, Vitalij Kovalevskij, Danielis Lingis, Laurynas Bučinskas, Justina Šapolaitė, Žilvinas Ežerinskis, Gedi Mainelis, Jurgita Ovadnevaitė, Simonas Kecorius, Kristina Plauškaitė-Šukienė, Steigvilė Byčenkienė
Publikováno v:
Building and Environment. 222:109429
Autor:
Tomas Ceponis, Mindaugas Gaspariūnas, V. Rumbauskas, Eugenijus Gaubas, L. Deveikis, Juozas Vaitkus, Vitalij Kovalevskij
Publikováno v:
Lithuanian Journal of Physics. 61
Profiling of particle beams is one of the most important diagnostic procedures for operating any kind of accelerator. In this work, the proton beam profilers, based on fluence measurements performed by recording the changes of carrier lifetime in Si
Autor:
Irmantas Kašalynas, Pawel Prystawko, Maciej Sakowicz, Artūr Šimukovič, Justinas Jorudas, Simonas Indrišiūnas, Wojciech Knap, Maksym Dub, Vitalij Kovalevskij, Sergey Rumyantsev
Publikováno v:
Micromachines, Vol 11, Iss 1131, p 1131 (2020)
Micromachines
Volume 11
Issue 12
Micromachines
Volume 11
Issue 12
We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN&ndash
SiC hybrid material was developed in o
SiC hybrid material was developed in o