Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Vitalii Z. Zubialevich"'
Autor:
Viacheslav N. Pavlovskii, I. Reklaitis, Tadas Malinauskas, Evgenii V. Lutsenko, M. V. Rzheutski, Kęstutis Jarašiūnas, Artūras Žukauskas, Vitalii Z. Zubialevich, Alexei S. Shulenkov, Saulius Nargelas, Arūnas Kadys, G. P. Yablonskii
Publikováno v:
physica status solidi c. 10:511-514
Excitation-intensity dependent photoluminescence (PL) as well as effective recombination time of a series of c-plane GaN layers grown on sapphire substrates were measured at room temperature. It was shown that at low excitation level a high backgroun
Autor:
Thomas Walther, I.P. Marko, Vitalii Z. Zubialevich, A. L. Gurskii, Markus Luenenbuerger, Harry Protzmann, Holger Kalisch, Evgenii V. Lutsenko, G. P. Yablonskii, Michael Heuken, Bernd Schineller, V. N. Pavlovskii, O. Schoen
Publikováno v:
SPIE Proceedings.
ZnSe/ZnMgSSe and InGaN/GaN heterostructure based lasers under optical transverse pumping by pulsed N 2 -laser radiation were investigated in a wide spectral, temperature and excitation intensity range for various types of heterostructures which diffe
Autor:
Markus Luenenbuerger, Bernd Schineller, G. P. Yablonskii, Vitalii Z. Zubialevich, I.P. Marko, Michael Heuken, A. L. Gurskii, A. Alam, Lutsenko Evgenii Viktorovich, Harry Protzmann, V. N. Pavlovskii
Publikováno v:
SPIE Proceedings.
The influence of layer thickness, heterostructure design, optical confinement factor and spontaneous emission efficiency on laser parameters of GaN based quantum well optically pumped lasers is studied in wide spectral (373 - 470 nm), temperature (77