Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Vitali V. Kozlovski"'
Autor:
Alexander A. Lebedev, Vitali V. Kozlovski, Klavdia S. Davydovskaya, Roman A. Kuzmin, Mikhail E. Levinshtein, Anatolii M. Strel’chuk
Publikováno v:
Materials, Vol 15, Iss 23, p 8637 (2022)
In this paper, the features of radiation compensation of wide-gap semiconductors are discussed, considering the case study of silicon carbide. Two classical methods of concentration determination are compared and analyzed: capacitance-voltage (C–V)
Externí odkaz:
https://doaj.org/article/57e8dd165eab4ca5858797a131c97ca9
Publikováno v:
Materials, Vol 14, Iss 17, p 4976 (2021)
The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels
Externí odkaz:
https://doaj.org/article/ede05b7373ea4d82a17f53290b718924
Autor:
Abrosimova Vera, Vitali V Kozlovski
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is rad
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:341-344
The effect of low-temperature annealing on the capacity–voltage and current–voltage characteristics of silicon-carbide-based semiconductor devices irradiated with 0.9-MeV electrons and 25-MeV protons are studied. Commercial high-voltage (a blocki
Publikováno v:
Semiconductors. 54:46-54
Annealing processes of vacancy-impurity atom pairs in moderately doped n-type silicon grown by the floating-zone technique and subjected to 0.9 MeV electron irradiation are investigated by means of Hall effect and conductivity measurements taking ove
Autor:
Vitali V. Kozlovski, Leonid Fursin, E. I. Shabunina, A. M. Strel’chuk, M E Levinshtein, Alexander A. Lebedev, P. A. Ivanov
Publikováno v:
Semiconductors. 53:1568-1572
Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation wit
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:1155-1159
The kinetics of the formation of radiation-induced defects in silicon and silicon carbide as a function of the absorbed energy is analyzed. The dependence of the concentration of conduction electrons n-Si and n-SiC on the irradiation dose is studied
Autor:
Michael E. Levinshtein, Alexander A. Lebedev, Vitali V. Kozlovski, Dmitriy A. Malevsky, Roman A. Kuzmin, Gagik A. Oganesyan
Publikováno v:
Solid-State Electronics. 196:108405
Publikováno v:
Materials
Materials, Vol 14, Iss 4976, p 4976 (2021)
Materials, Vol 14, Iss 4976, p 4976 (2021)
The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels
Autor:
Oleg Korolkov, Jana Toompuu, K. S. Davidovskaya, Vitali V. Kozlovski, N. Slepchuk, A. A. Lebedev, M. E. Levinshtein, Anatoly M. Strel'chuk
Publikováno v:
Technical Physics Letters. 46:287-289
The influence of proton irradiation at high temperatures (“hot” irradiation) on the capacitance–voltage and current–voltage characteristics of semiconductor devices based on silicon carbide has been studied for the first time. The experiments