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Autor:
Chan Yuan Hu, Jung Che Chen, Jone F. Chen, Min Hong Wang, Shoou-Jinn Chang, S. C. Chen, Vita Yeh
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:1298
Decoupled plasma nitridation (DPN) SiON films for short channel complementary metal-oxide-semiconductor (CMOS) devices were prepared with various rf powers. As we increased the SiON deposition power from 200to400W, it was found that gate leakage curr