Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Vishnuram Abhinav"'
Autor:
Vishnuram Abhinav, Tejas R. Naik
Publikováno v:
IEEE Access, Vol 12, Pp 121837-121845 (2024)
This paper presents the development of a non-toxic and low-cost potassium ion sensor utilizing an Extended Gate Field-Effect Transistor (EGFET) configuration with all-solid-state electrodes fabricated on a printed circuit board (PCB) substrate. An Ag
Externí odkaz:
https://doaj.org/article/5073622a82b147aa8d164bb8cd36b267
Publikováno v:
Oxides for Medical Applications ISBN: 9780323905381
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1acdcce87e26b5ec09436e51b2143c
https://doi.org/10.1016/b978-0-323-90538-1.00016-9
https://doi.org/10.1016/b978-0-323-90538-1.00016-9
Autor:
Vishnuram Abhinav, Maguy Abi Jaoude, Reetika Arora, Deepika Bansal, Vinod Belwanshi, Metka Benčina, Priya Bhardwaj, Dhruv Bhatnagar, Ankita Bhatt, Shivangi Chamoli, Ajay Kumar Chhantyal, null Deepika, Madhusmita Dhupal, Sanjeev Gautam, Varsha Gautam, Shiv Kumar Giri, Navdeep Goyal, Riya Gupta, Lalit Kumar Gupta, Md Imran Hossain, Ajmal Hussain, Aleš Iglič, Shubham Jain, Jayant K. Jogi, Ita Junkar, Ganeshlenin Kandasamy, Akshay Kumar, Anil Kumar, Nitesh Kumar, Vibhor Kumar, Varun Kumar, Piyush Kumar, Mamta Latwal, Archana Mahapatra, Pawan Kumar Maurya, Akansha Mehra, Rene Mihelič, Pawan Mishra, Tapas Kumar Mohapatra, Maruthi Mulaka, Ruchi Mutreja, Sitansu Sekhar Nanda, Ashish Nasa, Naveen Kumar Navani, Reena Rani Nayak, Vennila Preethi, Vu Thi Quyen, Deji R., Prem Ranjan, Pankaj Singh Rawat, Niharika Rawat, Shelishiya Raymond, Sanjay Kumar Sahu, Rajni Sharma, Ramesh K. Sharma, Chitven Sharma, Priya Shrivastava, Jitendra Pal Singh, Madan Singh, Gulab Singh, Sanjay K. Singhal, Ramesh C. Srivastava, Qui Thanh Hoai Ta, Ashish Tanna, Deepika Thakur, Deepa Beeta Thiyam, Rihard Trebše, Koushi Kumar U., Priyanka Verma, Jaime Viegas, Somu Yadav, Dong Kee Yi
Publikováno v:
Oxides for Medical Applications ISBN: 9780323905381
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bab511a73bef33381d9a936dffac459
https://doi.org/10.1016/b978-0-323-90538-1.01002-5
https://doi.org/10.1016/b978-0-323-90538-1.01002-5
Publikováno v:
Lecture Notes in Mechanical Engineering ISBN: 9789811683404
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728d2b5aa0be6bb91dc17327d453ed2b
https://doi.org/10.1007/978-981-16-8341-1_34
https://doi.org/10.1007/978-981-16-8341-1_34
In this work, we present a novel combination of solid-state ion-selective electrode and field effect transistor (FET) integrated on same platform. Thus, creating an extended gate field effect transistor (EGFET). We have built an electrochemical sensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1748f02b665267f57072ae3f410e3b95
https://ecsarxiv.org/7bukj
https://ecsarxiv.org/7bukj
Autor:
Vishnuram Abhinav, Rajul Patkar, Madhuri Vinchurkar, Tejas Rajendra Naik, Maryam Shojaei Baghini
Publikováno v:
ECS Meeting Abstracts. :2022-2022
High sensitivity, high selectivity, reproducibility and quick response are of prime importance for ion detection in various applications. In this respect, electrochemical detection is the best technique as compared to the traditional flame photometry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::275c32ae06dbc1a2f31c6b2092ba627c
https://doi.org/10.1149/ma2019-01/42/2022
https://doi.org/10.1149/ma2019-01/42/2022
Publikováno v:
VLSI Design
This work explores the new ESD (electrostatic discharge) protection design methodology for high speed off-chip communication ICs (Integrated Circuits). We propose novel methodology which describes the optimized design prediction of ESD protection dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3ced977498fa39674d28148d066da6f
https://doi.org/10.1109/vlsid.2016.50
https://doi.org/10.1109/vlsid.2016.50
Publikováno v:
VLSI Design
This paper presents novel capacitor less dynamic random access memory (DRAM) cells through band-gap engineered silicon-germanium (SiGe) junction less double gate field effect transistor (JL-DGFET) using two-dimensional commercial TCAD device simulato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d15cb6be79cc99bee62a6685960899
https://doi.org/10.1109/vlsid.2016.46
https://doi.org/10.1109/vlsid.2016.46