Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Vishnu Ottapilakkal"'
Autor:
Adama Mballo, Ali Ahaitouf, Suresh Sundaram, Ashutosh Srivastava, Vishnu Ottapilakkal, Rajat Gujrati, Phuong Vuong, Soufiane Karrakchou, Mritunjay Kumar, Xiaohang Li, Yacine Halfaya, Simon Gautier, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
ACS Omega, Vol 7, Iss 1, Pp 804-809 (2021)
Externí odkaz:
https://doaj.org/article/ef9d63bd4fda4090a25cc0046b2eac8d
Autor:
Aly Zaiter, Nikita Nikitskiy, Maud Nemoz, Phuong Vuong, Vishnu Ottapilakkal, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2404 (2023)
Aluminium Gallium Nitride (AlyGa1-yN) quantum dots (QDs) with thin sub-µm AlxGa1-xN layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN l
Externí odkaz:
https://doaj.org/article/844d92175fe6445c8ac7c5d3762bfe62
Autor:
Aly Zaiter, Adrien Michon, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, Vishnu Ottapilakkal, Phuong Vuong, Suresh Sundaram, Abdallah Ougazzaden, Julien Brault
Publikováno v:
Materials, Vol 15, Iss 23, p 8602 (2022)
In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing
Externí odkaz:
https://doaj.org/article/cee7aa01f4be4e8e8af0afaf9067a2d9
Autor:
Rajat Gujrati, Ashutosh Srivastava, Phuong Vuong, Vishnu Ottapilakkal, Yves N. Sama, Thi Huong Ngo, Tarik Moudakir, Gilles Patriarche, Simon Gautier, Paul L. Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
Advanced Materials Technologies.
Autor:
Andre Perepeliuc, Rajat Gujrati, Ashutosh Srivastava, Phuong Vuong, Vishnu Ottapilakkal, Paul L. Voss, Suresh Sundaram, Jean-Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
Oxide-based Materials and Devices XIV.
Autor:
Phuong Vuong, Suresh Sundaram, Vishnu Ottapilakkal, Gilles Patriarche, Ludovic Largeau, Ashutosh Srivastava, Adama Mballo, Tarik Moudakir, Simon Gautier, Paul L. Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden
Publikováno v:
ACS Applied Nano Materials. 5:791-800
Publikováno v:
ACS Applied Nano Materials. 4:8050-8058
Autor:
Karim Bouzid, Jean-Paul Salvestrini, Vishnu Ottapilakkal, Soufiane Karrakchou, Hibat E. Adjmi, Ali Ahaitouf, Paul L. Voss, Adama Mballo, Rajat Gujrati, Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Gilles Patriarche, Walid El Huni
Publikováno v:
ACS Applied Electronic Materials
ACS Applied Electronic Materials, American Chemical Society, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩
ACS Applied Electronic Materials, American Chemical Society, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩
International audience; We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique enabled by 2D h-BN. 30 μm-thick electroplated copper deposited on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18d7b4da2c5a4e86e5831cb361457c1e
https://hal.archives-ouvertes.fr/hal-03350389
https://hal.archives-ouvertes.fr/hal-03350389