Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Vishnu Kamat"'
Autor:
Ching-Mei Hsu, Grozdan Grozev, Hsu-Ting Huang, Tamer H. Coskun, Chris Ngai, Huixiong Dai, Mario Reybrouck, Gaetano Santoro, Vishnu Kamat
Publikováno v:
SPIE Proceedings.
In this paper we demonstrate the feasibility of Negative Tone Development (NTD) process to pattern 22nm node contact holes leveraging freeform source and model based assist features. We demonstrate this combined technology with detailed simulation an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2787950df8f782fcfa7405bd90fbf40f
https://doi.org/10.1117/12.918459
https://doi.org/10.1117/12.918459
Publikováno v:
SPIE Proceedings.
We present a comprehensive study of applicability of a fast 3D mask model in the context of source-mask optimization to advanced nodes. We compare the results of source optimization (SO) and source-mask optimization (SMO) with and without incorporati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360f4f08b1c70beeb735249f026b63d8
https://doi.org/10.1117/12.879704
https://doi.org/10.1117/12.879704
Autor:
Harry J. Levinson, Hidekazu Yoshida, Vishnu Kamat, Yunfei Deng, Tamer H. Coskun, Yuangsheng Ma, Jason Sweis, Jongwook Kye
Publikováno v:
SPIE Proceedings.
Double patterning technology (DPT) provides the extension to immersion lithography before EUV lithography or other alternative lithography technologies are ready for manufacturing. Besides the additional cost due to DPT processes over traditional sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::765641cd9ae8973c35b3f089c7a1aeab
https://doi.org/10.1117/12.879793
https://doi.org/10.1117/12.879793
Publikováno v:
SPIE Proceedings.
Mask Process Compensation (MPC) corrects proximity effects arising from e-beam lithography and plasma etch processes that are used in the photomask manufacturing. Accurate compensation of the mask process requires accurate, predictive models of the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36fa938802bc2ce6d40a6ad47746fd66
https://doi.org/10.1117/12.833485
https://doi.org/10.1117/12.833485
Autor:
Michiel Victor Paul Kruger, Vishnu Kamat, Marc D. Himel, Bayram Yenikaya, Jared D. Stack, Apo Sezginer, Tamer H. Coskun, James Carriere
Publikováno v:
SPIE Proceedings.
We present a method for optimizing a free-form illuminator implemented using a diffractive optical element (DOE). The method, which co-optimizes the source and mask taking entire images of circuit clips into account, improves the common process-windo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46dc8493ff71f39930ce9b2e6449b2fc
https://doi.org/10.1117/12.814215
https://doi.org/10.1117/12.814215
Autor:
Vishnu Kamat, Hsu-Ting Huang, Apo Sezginer, Ali Mokhberi, Jesus Carrero, Gökhan Perçin, Franz X. Zach
Publikováno v:
SPIE Proceedings.
We present a methodology for building through-process, physics-based litho and etch models which result in accurate and predictive models. The litho model parameters are inverted using resist SEM data collected on a set of test-structures for a set o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2ea43cb348b9801f87a4535b853fc3
https://doi.org/10.1117/12.692931
https://doi.org/10.1117/12.692931
Publikováno v:
SPIE Proceedings.
In optical proximity correction, edges of polygons are segmented, and segments are independently moved to meet line-width or edge placement goals. The purpose of segmenting edges is to increase the degrees of freedom in proximity correction. Segmenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e92b3e773da105aa7bb43ed0bb4070
https://doi.org/10.1117/12.656695
https://doi.org/10.1117/12.656695
Publikováno v:
SPIE Proceedings.
A typical wiring layer of SanDisk 3-dimensional memory device includes a dense array of lines. Every other line terminates in an enlarged contact pad at the edge of the array. The pitch of the pads is twice the pitch of the dense array. When process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17392b77f4c0daf29e08ae56861bb6fe
https://doi.org/10.1117/12.656725
https://doi.org/10.1117/12.656725
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