Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Vishnu K. Khemka"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:386-392
This paper discusses substrate majority carrier conduction and prevention for an n-type lateral double diffused MOSFET (NLDMOSFET) device in Smart Power IC technologies. Substrate majority carrier current poses severe electrical and thermal stress fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::336b4464bec87a5e7c791157db97e1f6
https://doi.org/10.1109/tdmr.2006.882198
https://doi.org/10.1109/tdmr.2006.882198
Autor:
Ivan Puchades, T. Roggenbauer, Vishnu K. Khemka, Ronghua Zhu, M. Butner, V. Parthasarathy, Amitava Bose
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 17:98-103
A novel nondestructive measurement technique is proposed to electrically monitor the depth of a trench etched in silicon for the purpose of process control in a manufacturing environment. A simple bipolar npn transistor can be constructed, the gain o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a45e2a03ec3d678cae50bea94c1a2822
https://doi.org/10.1109/tsm.2004.826936
https://doi.org/10.1109/tsm.2004.826936
Publikováno v:
IEEE Transactions on Electron Devices. 49:1049-1058
Thermal and electrical destruction of 55 V single and double reduced surface field (RESURF) lateral double-diffused MOSFETs (LDMOSFETs) in smart power ICs are investigated by experiments, simulations, and theoretical modeling. Static safe operating a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2a4f9aaa7f398a6071e0bda467bcc1f
https://doi.org/10.1109/ted.2002.1003740
https://doi.org/10.1109/ted.2002.1003740
Publikováno v:
Materials Science Forum. :1331-1334
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb321e8fa5ee100e94328d8d70b619e9
https://doi.org/10.4028/www.scientific.net/msf.338-342.1331
https://doi.org/10.4028/www.scientific.net/msf.338-342.1331
Publikováno v:
Materials Science Forum. :1211-1214
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474ba4395cd057d0f7c3e9daf7d393ab
https://doi.org/10.4028/www.scientific.net/msf.338-342.1211
https://doi.org/10.4028/www.scientific.net/msf.338-342.1211
Autor:
N. Ramungul, Mario Ghezzo, T. Paul Chow, Vishnu K. Khemka, Ahmed Elasser, Jeffery B. Fedison, James W. Kretchmer, Zhongda Li
Publikováno v:
Materials Science Forum. :1367-1370
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::076e946ee5ff007fec812df4be8b27db
https://doi.org/10.4028/www.scientific.net/msf.338-342.1367
https://doi.org/10.4028/www.scientific.net/msf.338-342.1367
Autor:
K. Matocha, N. Ramungul, T.P. Chow, Yi Tang, Vishnu K. Khemka, J.B. Fedison, Ronald J. Gutmann
Publikováno v:
Solid-State Electronics. 44:277-301
The present status of the silicon carbide and gallium nitride bipolar power semiconductor devices is reviewed. Several unipolar and bipolar figures of merit have been examined to demonstrate the potential performance gain to be obtained from silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8bc09920de37a6f7ad913db0ccb1897
https://doi.org/10.1016/s0038-1101(99)00235-x
https://doi.org/10.1016/s0038-1101(99)00235-x
Publikováno v:
Solid-State Electronics. 43:1945-1962
In this paper we present the investigation of properties of silicon carbide power rectifiers, in particular Schottky, PiN and advanced hybrid power rectifiers such as the trench MOS barrier Schottky rectifier. Analysis of the forward, reverse and swi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::751459ada574ac1b804a5fb9ac67e80d
https://doi.org/10.1016/s0038-1101(99)00155-0
https://doi.org/10.1016/s0038-1101(99)00155-0
Publikováno v:
Journal of Electronic Materials. 28:161-166
N2O annealing of oxides in both Si and SiC is known to result in a similar accumulation of nitrogen at the semiconductor-oxide interface, but the reoxidation of oxynitrides is different in these materials. With Si, the nitrogen at the interfl£e is u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::730052e776f9b452627f4e2b41e00afb
https://doi.org/10.1007/s11664-999-0007-0
https://doi.org/10.1007/s11664-999-0007-0
Publikováno v:
IEEE Transactions on Electron Devices. 46:465-470
The use of beryllium (Be) as an alternate p-type dopant for implanted silicon carbide (SiC) p/sup +/-n junctions is experimentally demonstrated. The implanted layers have been characterized with photoluminescence (PL) as well as secondary ion mass sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12e43f8b49141262893bbfc5df5fbed3
https://doi.org/10.1109/16.748863
https://doi.org/10.1109/16.748863