Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Vishank Talesara"'
Autor:
Junjie Pan, Chi-ling Chiang, Xinyu Wang, Paul Bertani, Yifan Ma, Junao Cheng, Vishank Talesara, Ly James Lee, Wu Lu
Publikováno v:
Nanoscale. 15:4080-4089
A single-cell-level study on the transfection window of nanochannel electroporation (NEP) provides a sound rationale for the delivery of different sized cargoes and high cell viability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8652be36b55d52d33293f3193e34e3d4
https://doi.org/10.1039/d2nr05575a
https://doi.org/10.1039/d2nr05575a
Publikováno v:
Journal of Materials Research. 36:4919-4926
We report the design and development of vertical 1.5 kV GaN p–n diodes that consists of an 8 μm drift layer and a thin p-GaN/p+-GaN layer grown by metal–organic chemical vapor deposition (MOCVD) on a hydride vapor phase epitaxy (HVPE) synthesize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd8f6774ac69dda9a3040ab7d37e50a4
https://doi.org/10.1557/s43578-021-00435-8
https://doi.org/10.1557/s43578-021-00435-8
Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFETs
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47695dde24e719519f4ff913ba1d340e
https://doi.org/10.1109/wipda56483.2022.9955292
https://doi.org/10.1109/wipda56483.2022.9955292
Publikováno v:
2022 Device Research Conference (DRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9afa542debe179a4a71cd032f6516f94
https://doi.org/10.1109/drc55272.2022.9855821
https://doi.org/10.1109/drc55272.2022.9855821
Publikováno v:
IEEE Transactions on Power Electronics. 35:9680-9689
Compared to silicon counterparts, silicon carbide (SiC) power mosfet s have lower on -state resistance and faster switching speed, which in turn makes them better candidates for high-voltage power switching applications. This creates a growing need t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e13b072a2da6b562e5bc2480be3b40d
https://doi.org/10.1109/tpel.2020.2972453
https://doi.org/10.1109/tpel.2020.2972453
Publikováno v:
IEEE Transactions on Power Electronics. 35:578-590
Graphene is a promising material for thermal management. Heating in power electronics is a severe issue since heat generation can lead to rise in device temperature which can cause performance degradation and device failure. However, current approach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f4f9be3a49fbf529c7b1066d9b09e40
https://doi.org/10.1109/tpel.2019.2913272
https://doi.org/10.1109/tpel.2019.2913272
Publikováno v:
Applied Physics Letters. 122:123501
High power vertical GaN devices are in great demand recently due to their potential on extremely high-power conversion efficiency. Here, we show vertical GaN p–n power diodes fabricated on bulk GaN substrates with an optimized guard ring structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeffdd29ff7d418bd3ff9bda81668907
https://doi.org/10.1063/5.0135313
https://doi.org/10.1063/5.0135313
Autor:
Wu Lu, Jinwoo Hwang, Hao Yang, Paul D. Garman, Jared M. Johnson, L. James Lee, Vishank Talesara, Jose M. Castro, Dan Zhang
Publikováno v:
ACS Applied Nano Materials. 2:452-458
Ceramic materials such as aluminum oxide (Al2O3) and aluminum nitride (AlN) are commonly implemented as heat sinks for a variety of applications. However, the thermal conductivity of these ceramics...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfae481ac83f136983bd747325b05943
https://doi.org/10.1021/acsanm.8b01998
https://doi.org/10.1021/acsanm.8b01998
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 16:2100599
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7be89beaea69e5f768a31e32a1766fb3
https://doi.org/10.1002/pssr.202100599
https://doi.org/10.1002/pssr.202100599
Autor:
Andrew M. Armstrong, Andrew A. Allerman, Shahadat H. Sohel, Towhidur Razzak, Siddharth Rajan, Fatih Akyol, Aaron R. Arehart, Yuewei Zhang, Wenyuan Sun, Vishank Talesara, Wu Lu, Sanyam Bajaj
Publikováno v:
IEEE Electron Device Letters. 39:256-259
We report on ultra-wide bandgap (UWBG) Al0.7Ga0.3N channel metal–oxide–semiconductor field-effect transistors (MOSFETs) grown by metal-organic chemical vapor deposition. Employing reverse Al composition graded ohmic contact layers and 20 nm Al2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca3601e20dc2c23b2bafea7cf00e743a
https://doi.org/10.1109/led.2017.2780221
https://doi.org/10.1109/led.2017.2780221