Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Vishal Saravade"'
Autor:
Ian T. Ferguson, Andrew Woode, Amirhossein Ghods, Chuanle Zhou, Vishal Saravade, Corey Lerner
Publikováno v:
IEEE Journal of Photovoltaics. 11:415-419
In this article, the concept of floating gate Schottky junction (FGSJ) solar cell with improved photovoltaic properties, compared to those of the conventional Schottky junction solar cell, is proposed. The floating gate junction is electrically isola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff05cf07775958a2c5320c4beebf4de8
https://doi.org/10.1109/jphotov.2020.3041244
https://doi.org/10.1109/jphotov.2020.3041244
Autor:
Vishal Saravade, Austin Crawford, Jenny Williams, Chuanle Zhou, Na Lu, Benjamin Klein, Ian Ferguson
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac3cb092b7f9cf705ccfec540335f90b
https://doi.org/10.1117/12.2607401
https://doi.org/10.1117/12.2607401
Autor:
Zhe Chuan Feng, Hao-Hsiung Lin, Bin Xin, Shi-Jane Tsai, Vishal Saravade, Jeffrey Yiin, Benjamin Klein, Ian T. Ferguson
Publikováno v:
Vacuum. 207:111643
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13487d8dc91aa533932143302e46a178
https://doi.org/10.1016/j.vacuum.2022.111643
https://doi.org/10.1016/j.vacuum.2022.111643
Autor:
Haixia Lu, Lianshan Wang, Yao Liu, Shuping Zhang, Yanlian Yang, Vishal Saravade, Zhe Chuan Feng, Benjamin Klein, Ian T Ferguson, Lingyu Wan, Wenhong Sun
Publikováno v:
Semiconductor Science and Technology. 37:065021
We report on the structural and optical properties of polar gallium nitride on c-plane sapphire substrates and semi-polar (11–22) GaN films on m-plane sapphire substrates by metalorganic chemical vapor deposition. Polar GaN on c-plane sapphire and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750fcc0aa2d1c3c97037e2665ec8ea20
https://doi.org/10.1088/1361-6641/ac696f
https://doi.org/10.1088/1361-6641/ac696f
Publikováno v:
MRS Advances. 3:159-164
Anomalous Hall effect was observed at room temperature in MOCVD-grown GaGdN from a (TMHD)3Gd source, which can contain oxygen in its organic ligand. GaN, and GaGdN grown using a Cp3Gd precursor which does not contain oxygen only showed the ordinary H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed6993773682c4e7833efa39b23f9dc
https://doi.org/10.1557/adv.2018.11
https://doi.org/10.1557/adv.2018.11
Autor:
Na Luna Lu, Ian T. Ferguson, Bahadir Kucukgok, Yining Feng, Amirhossein Ghods, Vishal Saravade, Kelcy L. Yunghans, Xiaodong Jiang, Chuanle Zhou, Paresh V. Patel, Cameron Ferguson
Publikováno v:
ECS Transactions. 77:3-21
The development of wide-band gap compound semiconductors materials and structures led by III-Nitrides (GaN, InN, etc.) have fueled a revolution of LEDs for lighting applications. However, these materials and related devices have also made contributio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::943d9326845cc497e8f8d4631eb4ebd4
https://doi.org/10.1149/07706.0003ecst
https://doi.org/10.1149/07706.0003ecst
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVII.
Nickel-doped zinc oxide (ZnNiO) was grown on sapphire by metal organic chemical vapor deposition (MOCVD) with varying Ni content under two growth conditions of 400°C/100 Torr and 450°C/30 Torr. Elemental composition indicated that Ni could occupy Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ada22fe5c785c09e7a935816f2a853a7
https://doi.org/10.1117/12.2543909
https://doi.org/10.1117/12.2543909
Publikováno v:
ES Materials & Manufacturing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a371af19fb8bdcb13c6f115e861901b5
https://doi.org/10.30919/esmm5f715
https://doi.org/10.30919/esmm5f715
Publikováno v:
2019 IEEE 16th International Conference on Smart Cities: Improving Quality of Life Using ICT & IoT and AI (HONET-ICT).
There has been an exponential growth in the microelectronics industry over the last 70 years with a consistent miniaturization of transistors’ size and increase in the speed and on-chip transistors density with reasonable power consumption, as seen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06a77caddf31cf9117a353ced416a1ed
https://doi.org/10.1109/honet.2019.8908100
https://doi.org/10.1109/honet.2019.8908100
Publikováno v:
2019 IEEE 16th International Conference on Smart Cities: Improving Quality of Life Using ICT & IoT and AI (HONET-ICT).
Hybrid solar cells, consisting of both organic and inorganic layers have shown to be promising in developing solar cells with suitable photovoltaic properties, advantage of low temperature processing and much lower production cost than conventional p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae9bb01b20bba25ea3491de83435952
https://doi.org/10.1109/honet.2019.8908087
https://doi.org/10.1109/honet.2019.8908087